bsc190n12ns3g Infineon Technologies Corporation, bsc190n12ns3g Datasheet

bsc190n12ns3g

Manufacturer Part Number

bsc190n12ns3g

Description

Optimostm3 Power Transistor Power Mosfet

Manufacturer

Infineon Technologies Corporation

Datasheet

1.BSC190N12NS3G.pdf (10 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

BSC190N12NS3G

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

Euro Chip Distribution

Part Number:

BSC190N12NS3G

Quantity:

1 065

Current page: 1 of 10
Download datasheet (435Kb)

Rev. 2.5

Features

• N-channel, normal level

• Excellent gate charge x R

• Very low on-resistance R

• 150 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

OptiMOS

Type

BSC190N12NS3 G

J-STD20 and JESD22

3 Power-Transistor

Package

PG-TDSON-8

=25 °C, unless otherwise specified

DS(on)

product (FOM)

for target application

Symbol Conditions

D,pulse

tot

, T

Marking

190N12NS

stg

page 1

thJA

=39 A, R

=25 °C,

=25 °C

=100 °C

=25 °C

=45 K/W

=25 Ω

Product Summary

DS(on),max

-55 ... 150

55/150/56

PG-TDSON-8

Value

176

±20

8.6

BSC190N12NS3 G

120

Unit

°C

mΩ

2009-10-30

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