bsc014n03lsg Infineon Technologies Corporation, bsc014n03lsg Datasheet
bsc014n03lsg
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bsc014n03lsg Summary of contents
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OptiMOS ® 3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel • Logic level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) ...
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Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case Device on PCB Electrical characteristics Static characteristics ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot C 160 140 120 100 Safe operating area I =f =25 ° parameter ...
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Typ. output characteristics I =f =25 ° parameter 400 4.5 V 350 5 V 300 10 V 250 200 150 100 Typ. transfer characteristics I =f(V ...
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Drain-source on-state resistance =10 V DS(on 2 0.5 0 -60 - Typ. capacitances C =f ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS ...
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Package Outline PG-TDSON-8: Outline Rev. 1.1 PG-TDSON-8 page 8 BSC014N03LS G 2008-11-12 ...
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Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.1 page 9 BSC014N03LS G 2008-11-12 ...
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Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With ...