bsc017n04nsg Infineon Technologies Corporation, bsc017n04nsg Datasheet - Page 6

• Manufacturer Part Number: bsc017n04nsg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
3.5
2.5
1.5
0.5
4
3
2
1
DS
=f(T
3
2
1
0
10000
1000
100
0
10
-60
); V
j
); I
GS
D
-20
=0 V; f =1 MHz
=50 A; V
10
98 %
20
GS
V
=10 V
T
DS
typ
20
j
60
[°C]
Coss
Ciss
[V]
Crss
100
30
140
180
page 6
40
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
4.5
3.5
2.5
1.5
10
=f(T
SD
4
3
2
1
1
-60
0.0
)
j
); V
j
GS
-20
=V
150 °C
0.5
DS
20
; I
D
=85 µA
V
T
25 °C
SD
j
1.0
60
[°C]
[V]
BSC017N04NS G
25 °C, 98%
100
1.5
150 °C, 98%
140
2007-12-14
180
2.0