bsc060n10ns3g Infineon Technologies Corporation, bsc060n10ns3g Datasheet - Page 5

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bsc060n10ns3g

Manufacturer Part Number
bsc060n10ns3g
Description
Optimos 3 Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

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Rev. 2.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
120
100
140
120
100
80
60
40
20
80
60
40
20
DS
GS
0
0
); T
0
0
); |V
7 V
10 V
j
=25 °C
j
GS
DS
|>2|I
6 V
D
5.5 V
|R
1
2
DS(on)max
V
V
150 °C
GS
DS
4.5 V
[V]
[V]
5 V
2
4
25 °C
page 5
3
6
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
140
120
100
12
10
80
60
40
20
D
=f(I
8
6
4
2
0
0
); T
0
0
D
j
); T
=25 °C
GS
20
4.5 V
j
=25 °C
20
40
5 V
40
60
I
I
D
D
[A]
[A]
5.5 V
80
BSC060N10NS3 G
60
6 V
100
7 V
80
120
10 V
2008-10-20
100
140

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