ssm6n7002afu TOSHIBA Semiconductor CORPORATION, ssm6n7002afu Datasheet - Page 2

• Manufacturer Part Number: ssm6n7002afu
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Precaution
for this product. For normal switching operation, V
lower voltage than V
V
(The relationship can be established as follows: V
Take this into consideration when using the device.
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
th
(a) Test circuit
can be expressed as the voltage between gate and source when the low operating current value is I
4.5 V
V
Duty < = 1%
V
(Z
Common Source
Ta = 25 °C
0
DD
IN
out
Characteristics
: t
10 μs
= 30 V
r
= 50 Ω)
, t
th.
f
< 2 ns
Turn-on delay time
Turn-off delay time
IN
(Ta = 25°C)
R
V
OUT
L
DD
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
td
td
I
I
C
C
C
GSS
DSS
V
oss
(on)
(off)
iss
rss
th
fs
GS (on)
⎪
GS (off)
(Q1, Q2 Common)
V
I
V
V
V
I
I
I
V
V
V
(b) V
(c) V
D
D
D
D
requires a higher voltage than V
GS
DS
DS
DS
DS
DD
GS
= 0.1 mA, V
= 500 mA, V
= 100 mA, V
= 100 mA, V
< V
2
= 10 V, I
= ± 20 V, V
= 60 V, V
= 10 V, I
= 25 V, V
= 30 V , I
= 0 to 4.5 V
OUT
IN
th
< V
Test Condition
V
D
D
GS (on).
DS (ON)
GS
GS
GS
GS
GS
GS
V
= 0.25 mA
= 200 mA
D
4.5 V
DS
DD
0 V
= 0 V
= 0, f = 1 MHz
= 200 mA ,
= 0 V
= 10 V
= 5 V
= 4.5 V
= 0 V
td
)
(on)
10 %
t
r
10 %
90 %
th,
Min
205
1.0
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
and V
SSM6N7002AFU
90 %
GS (off)
Typ
1.5
1.7
1.8
2.3
6.1
16
⎯
⎯
⎯
⎯
⎯
3
7
td
(off)
t
f
D
2007-05-28
requires a
± 0.1
Max
= 0.25 mA
2.5
3.0
3.2
3.3
⎯
10
20
⎯
⎯
⎯
⎯
1
Unit
mS
μA
μA
pF
ns
Ω
V
V