ssm6n7002afu TOSHIBA Semiconductor CORPORATION, ssm6n7002afu Datasheet - Page 3

• Manufacturer Part Number: ssm6n7002afu
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
800
600
400
200
0
2
1
0
4
3
2
1
0
4
3
0
5
0
Common source
Ta = 25°C
Common source
Ta = 25°C
10
V GS = 4.5 V
0.4
Drain-Source voltage V DS (V)
Gate-Source voltage V GS (V)
2
Drain current I D (mA)
30
R
R
DS (ON)
0.8
DS (ON)
4
I
D
50
– V
100
DS
– V
– I
1.2
5 V
6
10 V
10
GS
D
I D = 100 mA
Ta = 25°C
Common source
7
300 500
Ta = 25°C
1.6
V GS = 2.3 V
8
5
100°C
−25°C
4.5
3.3
4.0
3.0
2.7
2.5
1000
10
2
3
0.001
1000
0.01
100
0.1
10
2.0
1.5
1.0
0.5
−50
1
4
3
2
1
0
−50
0
0
Common source
V DS = 10 V
Common source
Common source
V DS = 10 V
I D = 0.25 mA
100°C
1
V GS = 5 V, I D = 100 mA
Gate-Source voltage V GS (V)
Ambient temperature Ta (°C)
−25°C
Ambient temperature Ta (°C)
0
Ta = 25°C
0
2
R
DS (ON)
I
V
V GS = 4.5 V, I D = 100 mA
D
3
th
– V
50
50
– Ta
GS
V GS = 10 V, I D = 500 mA
4
– Ta
SSM6N7002AFU
5
100
100
6
2007-05-28
150
150
7