ssm6n7002afu TOSHIBA Semiconductor CORPORATION, ssm6n7002afu Datasheet - Page 4

• Manufacturer Part Number: ssm6n7002afu
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

5000
3000
1000
500
300
100
500
400
300
200
100
50
30
10
5
3
1
0
10
1
0
*: Total rating
Common source
V DS = 10 V
Ta = 25°C
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Drain-Source voltage V DS (V)
Ambient temperature Ta (°C)
30
40
3
Drain current I D (mA)
50
5
⎪Y
P
Mounted on FR4 board.
(25.4 mm × 25.4 mm ×1.6 t
Cu pad: 0.32 mm
C – V
D
fs
* – Ta
100
80
⎪ – I
10
DS
D
2
300
120
30
× 6) Figure 1
500
50
C oss
C rss
C iss
1000
100
160
4
1000
1000
800
600
400
200
500
300
100
50
30
10
0
1
5
3
0
1
Common source
V GS = 0 V
Ta = 25°C
t d(off)
t d(on)
t f
t r
G
−0.4
3
Drain-Source voltage V DS (V)
5
D
S
Drain current I D (mA)
10
−0.8
I
DR
t – I
– V
30
D
DS
50
−1.2
SSM6N7002AFU
100
Common source
V DD = 30 V
V GS = 0 to 4.5 V
Ta = 25°C
−1.6
300
2007-05-28
500
1000
−2