m52s128324a Elite Semiconductor Memory Technology Inc., m52s128324a Datasheet - Page 34

• Manufacturer Part Number: m52s128324a
• Description: 1m X 32 Bit X 4 Banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
Page Read Cycle at Different Bank @ Burst Length = 4
D Q
Note: 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge.
Elite Semiconductor Memory Technology Inc.
C L O C K
A 1 0 / A P
A D D R
C K E
C L = 2
C L = 3
D Q M
R A S
C A S
B A 1
B A 0
W E
C S
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
R o w A c t i v e
( A - B a n k )
0
* N o t e 1
R A a
R A a
1
R o w A c t i v e
( B - B a n k )
2
R B b
R B b
( A - B a n k )
3
R e a d
C A a
4
R o w A c t i v e
( C - B a n k )
5
Q A a 0
R C c
R C c
( B - B a n k )
6
R e a d
Q A a 0 Q A a 1 Q A a 2 Q B b 0
Q A a 1
C B b
P r e c h a r g e
( A - B a n k )
7
Q A a 2
R o w A c t i v e
8
( D - B a n k )
Q B b 0
R D d
R D d
( C - B a n k )
9
R e a d
H I G H
Q B b 1
C C c
P r e c h a r g e
( B - B a n k )
10
Q B b 2 Q C c 0 Q C c 1 Q C c 2 QD d 0 QD d 1 Q D d 2
Q B b 1
11
Q B b 2
( D - B a n k )
12
R e a d
Q C c 0
C D d
P r e c h a r g e
( C - B a n k )
13
Q C c 1 Q C c 2 QD d 0
Publication Date: Mar. 2009
Revision: 1.4
14
M52S128324A
P r e c h a r g e
( D - B a n k )
15
16
Q D d 1
* N o t e 2
17
QD d 2
: D o n ' t C a r e
18
34/47
19