sp000223256 Infineon Technologies Corporation, sp000223256 Datasheet - Page 4

• Manufacturer Part Number: sp000223256
• Description: N-channel Mosfets >500v?900v Power Transistor
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
1 Power dissipation
P
3 Max. transient thermal impedance
Z
parameter: D=t
thJC
tot
=f(T
150
100
50
10
10
=f(t
10
0
-1
-2
0
0
C
10
)
P
0.2
0.5
0.1
0.01
)
-5
0.05
0.02
single pulse
p
/T
10
40
-4
10
T
-3
C
t
80
[°C]
p
[s]
10
-2
120
10
-1
page 4
160
10
0
2 Safe operating area
I
parameter: t
4 Typ. output characteristics
I
parameter: V
D
D
=f(V
=f(V
10
10
10
10
75
60
45
30
15
0
DS
DS
-1
2
1
0
10
0
); T
); T
0
limited by on-state
resistance
C
p
j
=25 °C
GS
=25 °C; D =0
5
10
1
V
V
DS
DS
DC
10
[V]
[V]
10
100 µs
6 V
10 ms
7 V
5.5 V
1 ms
5 V
4.5 V
IPB60R199CP
2
10 µs
15
10 V
1 µs
20 V
8 V
2006-06-19
10
20
3