std1nb60 STMicroelectronics, std1nb60 Datasheet
std1nb60
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std1nb60 Summary of contents
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... A TO-251 (Suffix "-1") INTERNAL SCHEMATIC DIAGRAM = 100 di/dt â 200 STD1NB60 MOSFET PRELIMINARY DATA IPAK DPAK TO-252 (Suffix "T4") Value Unit 600 600 0.36 W/ 3.5 V/ns -65 to 150 ...
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... STD1NB60 THERMAL DATA R Thermal Resistance Junction-case thj-case Thermal Resistance Junction-ambient Rthj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T ...
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... 4 Test Conditions di/dt = 100 100 150 STD1NB60 Min. Typ. Max. Unit 3.5 nC Min. Typ. Max. Unit Min. Typ. Max. Unit ...
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... STD1NB60 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 4/6 mm TYP. MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.3 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 0 inch TYP. MAX. 0.094 0.043 0.051 ...
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... H 9.35 L2 0.8 L4 0.6 H DETAIL "A" inch MAX. MIN. TYP. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 0.031 1 0.023 DETAIL "A" STD1NB60 MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 0.039 0068772-B 5/6 ...
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... STD1NB60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...