k4s161622e Samsung Semiconductor, Inc., k4s161622e Datasheet - Page 5

• Manufacturer Part Number: k4s161622e
• Description: 1m X 16 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4S161622E
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Note :
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
1. Unless otherwise notes, Input level is CMOS(V
2. Measured with outputs open. Addresses are changed only one time during tcc(min).
3. Refresh period is 32ms. Addresses are changed only one time during tcc(min).
4. K4S161622E-TC**
Parameter
I
I
I
I
I
I
I
I
I
I
I
I
Symbol
CC1
CC2
CC2
CC2
CC2
CC3
CC3
CC3
CC3
CC4
CC5
CC6
P
PS
N
NS
P
PS
N
NS
Burst Length =1
t
I
CKE V
CKE & CLK V
CKE V
Input signals are changed one time during 30ns
CKE V
Input signals are stable
CKE V
CKE & CLK V
CKE V
Input signals are changed one time during 30ns
CKE V
Input signals are stable
RC
o
= 0 mA
Page Burst 2Banks Activated
t
RC
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS V
(min), CLK V
(min), CS V
(min), CLK V
Test Condition
t
t
RC
CCD
IH
I
IL
IL
o
/V
(max), t
(max), t
CC
CC
= 0 mA
t
RC
IL
= 2CLKs
CKE 0.2V
=V
A
= 15ns
= 15ns
(min)
= 0 to 70 C)
IH
IH
DDQ
IL
IL
(min), t
(min), t
CC
CC
(max), t
(max), t
=
=
/V
SSQ
CC
CC
CC
CC
) in LVTTL.
= 15ns
= 15ns
=
=
Latency
CAS
3
2
3
2
3
2
120 115 105
155 150 140 130 115
105 100
-55
-
-
-
-60
-
-
-
Version
115 115 100
-70
90
95
15
25
15
90
2
2
5
3
3
1
CMOS SDRAM
Rev 1.1 Jan '03
-80
95
95
90
90
-10
85
80
80
80
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
2
2
3
4