mt18hvs25672pky-53e Micron Semiconductor Products, mt18hvs25672pky-53e Datasheet
mt18hvs25672pky-53e
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mt18hvs25672pky-53e Summary of contents
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... Frequency/CAS latency – 2.5ns @ (DDR2-800) – 3.0ns @ (DDR2-667 – 3.75ns @ (DDR2-533) Notes: 1. Contact Micron for industrial temperature CAS (READ) latency; registered mode 3. Not available in 4GB module density. Data Rate (MT/ 800 533 – ...
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... Refresh count Row address Device bank address Device page size per bank Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 2GB Modules Base device: MT47H256M8THN, 2 Part Number MT18HVS25672(P)KY-80E__ MT18HVS25672(P)KY-667__ MT18HVS25672(P)KY-53E__ Table 4: Part Numbers and Timing Parameters – 4GB Modules ...
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Pin Assignments and Descriptions Table 5: Pin Assignments 244-Pin VLP Mini-RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol REF DQ24 DQ0 34 DQ25 65 4 DQ1 ...
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... LM command. Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module. Parity error found on the address and control bus. The non-parity version is not used. ...
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... SSTL_18 reference voltage (V /2). DD Ground. No connect: These pins are not connected on the module. No function: Connected within the module but provides no functionality. Micron Technology, Inc., reserves the right to change products or specifications without notice. 5 Pin Assignments and Descriptions ©2007 Micron Technology, Inc. All rights reserved. ...
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Functional Block Diagram Figure 3: Functional Block Diagram RS1# RS0# DQS0 DQS0# DM0/RDQS9 NF/DQS9# DM/ RDQS DQ DQ0 DQ1 DQ DQ DQ2 DQ DQ3 DQ4 DQ DQ DQ5 DQ DQ6 DQ7 DQ DQS1 DQS1# DM1/RDQS10 NF/DQS10# DM/ RDQS DQ8 DQ ...
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... DDR2 SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes are programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...
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... Electrical Specifications Stresses greater than those listed in Table 6 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in the device data sheet are not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...
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I Specifications DD Table 8: I Specifications and Conditions – 2GB DD Values are shown for the MT47H256M8THN DDR2 SDRAM only and are computed from values specified in the 2Gb TwinDie (256 Meg x 8) component data sheet Parameter/Condition Operating ...
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Table 9: I Specifications and Conditions – 4GB DD Values are shown for the MT47H512M8THM DDR2 SDRAM only and are computed from values specified in the 4Gb TwinDie (512 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge ...
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... Timing and switching specifications for the register listed above are critical for proper oper- ation of the DDR2 SDRAM registered DIMMs. These are meant subset of the param- eters for the specific device used on the module. Detailed information for this register is available in JEDEC-standard JESD82. ...
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Table 11: PLL Specifications CU877 device or equivalent JESD82-8.01 Parameter Symbol DC high-level input voltage V DC low-level input voltage V V Input voltage (limits high-level input voltage DC low-level input voltage V Input differential-pair cross V voltage ...
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Serial Presence-Detect Table 13: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...
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... Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on assembly 4 Number of column addresses on assembly 5 DIMM height and module ranks 6 Module data width 7 Reserved 8 Module voltage interface levels t 9 SDRAM cycle time, CK (CL = MAX value, see byte 18) ...
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... Module serial number 99–127 Reserved for manufacturer-specific data 128–255 Reserved for customer-specific data Notes: 1. The 4GB module is not available in the -80E speed grade. 2. The DDR2 device specification is PDF: 09005aef8281e0a3/Source: 09005aef8281d7ea HVS18C256_512x72PK.fm - Rev. A 8/07 EN 2GB, 4GB (x72, DR) 244-Pin DDR2 VLP Mini-RDIMM ...
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... U10 U11 U12 3.6 (0.142) TYP 38.4 (1.512) TYP ® property of their respective owners. characterization sometimes occur. Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 Module Dimensions 3.8 (0.15) U7 18.3 (0.720) 18.1 (0.713) 10.0 (0.394) TYP 1.1 (0.043) 0.9 (0.035) Pin 122 Pin 123 ©2007 Micron Technology, Inc. All rights reserved. ...