mt18hvs25672pky-53e Micron Semiconductor Products, mt18hvs25672pky-53e Datasheet - Page 2

• Manufacturer Part Number: mt18hvs25672pky-53e
• Description: 2gb, 4gb X72, Dr 244-pin Ddr2 Vlp Mini-rdimm
• Manufacturer: Micron Semiconductor Products

Table 2:
Table 3:
Table 4:
PDF: 09005aef8281e0a3/Source: 09005aef8281d7ea
HVS18C256_512x72PK.fm - Rev. A 8/07 EN
Part Number
MT18HVS25672(P)KY-80E__
MT18HVS25672(P)KY-667__
MT18HVS25672(P)KY-53E__
Part Number
MT18HVS51272(P)KY-667__
MT18HVS51272(P)KY-53E__
Parameter
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
Addressing
Part Numbers and Timing Parameters – 2GB Modules
Base device: MT47H256M8THN,
Part Numbers and Timing Parameters – 4GB Modules
Base device: MT47H512M8THM,
2
2
Notes:
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes.
Example: MT18HVS51272PKY-53EA1.
Module
Density
Module
Density
4GB
4GB
2GB
2GB
2GB
1
1
2Gb TwinDie DDR2 SDRAM
4Gb TwinDie DDR2 SDRAM
Configuration
Configuration
512 Meg x 8
512 Meg x 8
256 Meg x 8
256 Meg x 8
256 Meg x 8
2GB, 4GB (x72, DR) 244-Pin DDR2 VLP Mini-RDIMM
2Gb TwinDie (256 Meg x 8)
16K (A0–A13)
8 (BA0, BA1)
2
1K (A0–A9)
2 (S0#, S1#)
2GB
1KB
8K
Bandwidth
Bandwidth
Module
5.3 GB/s
4.3 GB/s
Module
6.4 GB/s
5.3 GB/s
4.3 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
3.0ns/667 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
Data Rate
Data Rate
4Gb TwinDie (512 Meg x 8)
©2007 Micron Technology, Inc. All rights reserved.
32K (A0–A14)
8 (BA0–BA2)
1K (A0–A9)
2 (S0#, S1#)
4GB
1KB
8K
(CL-
(CL-
Clock Cycles
Clock Cycles
t
t
Features
5-5-5
5-5-5
4-4-4
5-5-5
4-4-4
RCD-
RCD-
t
t
RP)
RP)