m470t5663eh3 Samsung Semiconductor, Inc., m470t5663eh3 Datasheet
m470t5663eh3
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m470t5663eh3 Summary of contents
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SODIMM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb E-die 60FBGA & 84FBGA with Lead-Free and Halogen-Free INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT ...
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... Input DC Logic Level ...................................................................................................................12 9.4 Input AC Logic Level 9.5 AC Input Test Conditions 10.0 IDD Specification Parameters Definition ................................................................................13 11.0 Operating Current Table : ........................................................................................................14 11.1 M470T5663EH3 : 256Mx64 2GB Module 11.2 M470T2864EH3 : 128Mx64 1GB Module 11.3 M470T2863EH3: 128Mx64 1GB Module 11.4 M470T6464EHS: 64Mx64 512MB Module 12.0 Input/Output Capacitance ........................................................................................................16 13.0 Electrical Characteristics & AC Timing for DDR2-800/667 ...................................................16 13.1 Refresh Parameters by Device Density 13 ...
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SODIMM Revision History Revision Month Year 1.0 August 2008 - Initial Release DDR2 SDRAM History Rev. 1.0 August 2008 ...
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... SODIMM 1.0 DDR2 Unbuffered SODIMM Ordering Information Part Number M470T5663EH3-C(L)E7/F7/E6 M470T2864EH3-C(L)E7/F7/E6 M470T2863EH3-C(L)E7/F7/E6 M470T6464EHS-C(L)E7/F7/E6 Note : 1. “H” of Part number(12th digit) stands for Lead-Free, Halogen-Free, and RoHS compliant products. 2. “3” of Part number(13th digit) stands for Dummy Pad PCB products. 2.0 Features • Performance range ...
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... DQS2 Note : Connect; NC, TEST(pin 163)is for bus analysis tool and is not connected on normal memory modules. 5.0 Pin Description Pin Name Description CK0,CK1 Clock Inputs, positive line CK0,CK1 Clock Inputs, negative line CKE0,CKE1 Clock Enables RAS Row Address Strobe ...
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... In Read mode, the data strobe is sourced by the DDR2 SDRAMs and is sent at the leading edge of the data window. DQS signals are complements, and timing is relative to the crosspoint of respective DQS and DQS If the module operated in single ended strobe mode, all DQS signals must be tied on the system board to V registers programmed appropriately ...
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... SODIMM 7.0 Functional Block Diagram : 7.1 2GB, 256Mx64 Module - M470T5663EH3 (Populated as 2 ranks of x8 DDR2 SDRAMs) 3Ω CKE1 ODT1 S1 CKE0 ODT0 S0 DQS0 DQS DQS DQS0 DM DM0 DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 I/O 3 DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 I/O 7 DQS1 DQS DQS1 DQS DM DM1 DQ8 I/O 8 DQ9 I/O 9 DQ10 I/O 10 DQ11 ...
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... SODIMM 7.2 1GB, 128Mx64 Module - M470T2864EH3 (Populated as 2 rank of x16 DDR2 SDRAMs) 3Ω ODT1 ODT0 CKE1 CKE0 S1 S0 DQS0 CS LDQS DQS0 LDQS LDM DM0 DQ0 I/O 0 DQ1 I DQ2 I/O 2 DQ3 I/O 3 DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 I/O 7 DQS1 UDQS UDQS DQS1 UDM DM1 DQ8 I/O 8 DQ9 I/O 9 DQ10 ...
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... SODIMM 7.3 1GB, 128Mx64 Module - M470T2863EH3 (Populated as 1 rank of x8 DDR2 SDRAMs) ODT1 CKE1 3Ω CKE0 ODT0 S0 CS DQS0 DQS DQS0 DQS DM DM0 D0 DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 I/O 3 DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 I DQS1 DQS DQS1 DQS DM DM1 D1 DQ8 I/O 0 DQ9 I/O 1 DQ10 I/O 2 DQ11 I/O 3 DQ12 ...
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... SODIMM 7.4 512MB, 64Mx64 Module - M470T6464EHS (Populated as 1 rank of x16 DDR2 SDRAMs) 3Ω CKE0 ODT0 S0 DQS0 DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DQS2 DM2 DQ16 DQ17 ...
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SODIMM 8.0 Absolute Maximum DC Ratings Symbol Parameter Voltage Voltage DDQ DDQ Voltage DDL DDL Voltage on any pin relative IN, OUT T Storage Temperature ...
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SODIMM 9.2 Operating Temperature Condition Symbol T Operating Temperature OPER Note : 1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2 standard ...
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SODIMM 10.0 IDD Specification Parameters Definition (IDD values are for full operating range of Voltage and Temperature) Symbol Operating one bank active-precharge current; IDD0 tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH HIGH between ...
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... SODIMM 11.0 Operating Current Table : 11.1 M470T5663EH3 : 256Mx64 2GB Module Symbol 800@CL=5 CE7 IDD0 776 IDD1 856 IDD2P 160 IDD2Q 400 IDD2N 512 IDD3P-F 448 IDD3P-S 240 IDD3N 576 IDD4W 1,016 IDD4R 1,256 IDD5 1,072 IDD6 160 IDD7 1,856 * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. ...
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... IDD3P-S 60 IDD3N 148 IDD4W 288 IDD4R 360 IDD5 480 IDD6 40 IDD7 680 * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. 800@CL=6 LE7 CF7 LF7 520 600 200 256 224 120 320 ...
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... CASE tREFI 85 °C < T ≤ 95°C CASE DDR2-800(E7) DDR2-800(F7 max min 3. 2 70000 DDR2 SDRAM (V =1.8V DDQ Min Max Min M470T5663EH3 M470T2864EH3 - M470T2863EH3 M470T6464EHS - 5.5 - 256Mb 512Mb 1Gb 2Gb 75 105 127.5 195 7.8 7.8 7.8 7.8 3.9 3.9 3.9 3 ...
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SODIMM 13.3 Timing Parameters by Speed Grade (Refer to notes for informations related to this table at the component datasheet) Parameter DQ output access time from CK/CK DQS output access time from CK/CK Average clock HIGH pulse width Average clock ...
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SODIMM Parameter Four Activate Window for 1KB page size products Four Activate Window for 2KB page size products CAS to CAS command delay Write recovery time Auto precharge write recovery + precharge time Internal write to read command delay Internal ...
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... SODIMM 14.0 Physical Dimensions : 14.1 128Mbx8 based 256Mx64 Module (2 Rank) - M470T5663EH3 a 1 ± 11.40 0.15 mm ± 16.25 0.15 mm 63. 67.60 FRONT SIDE ± 4.20 0.15 1.50 ± 0.10 2.70 ± 0.10 1.0 ± 0.05 4.00 ± 0.10 The used device is 128M x8 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T1G084QE ± 67.60 0.15 mm min 2.00 SPD b 199 ± 47.40 0.15 mm ± 0.15 mm 200 ± 0.15 mm DETAIL a BACK SIDE 4.00 ± ...
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... SODIMM 14.2 64Mbx16 based 128Mx64 Module (2 Rank) - M470T2864EH3 1 ± 11.40 0.15 mm ± 16.25 0. FRONT SIDE ± 4.20 0.15 1.50 ± 0.10 2.70 ± 0.10 1.0 ± 0.05 4.00 ± 0.10 The used device is 64M x16 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T1G164QE ± 67.60 0. 199 ± 47.40 0.15 mm ± 63.00 0.15 mm 200 a ± 67.60 0.15 mm DETAIL a BACK SIDE 4.00 ± 0.10 1.0 ± 0.05 1.80 ± ...
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... SODIMM 14.3 128Mbx8 based 128Mx64 Module (1 Rank) 1 ± 11.40 0.15 mm ± 16.25 0. FRONT SIDE ± 4.20 0.15 1.50 ± 0.10 2.70 ± 0.10 1.0 ± 0.05 4.00 ± 0.10 The used device is 128M x8 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T1G084QE - M470T2863EH3 ± 67.60 0. 199 ± 47.40 0.15 mm ± 63.00 0.15 mm 200 a ± 67.60 0.15 mm DETAIL a BACK SIDE 4.00 ± 0.10 1.0 ± 0.05 1.80 ± 0.10 2.40 ± ...
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... SODIMM 14.4 64Mbx16 based 64Mx64 Module (1 Rank) 1 ± 11.40 0.15 mm ± 16.25 0. FRONT SIDE ± 4.20 0.15 1.50 ± 0.10 2.70 ± 0.10 1.0 ± 0.05 4.00 ± 0.10 The used device is 64M x16 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T1G164QE - M470T6464EHS ± 67.60 0. 199 ± 47.40 0.15 mm ± 63.00 0.15 mm 200 a ± 67.60 0.15 mm DETAIL a BACK SIDE 4.00 ± 0.10 1.0 ± 0.05 1.80 ± ...