m470t5663eh3 Samsung Semiconductor, Inc., m470t5663eh3 Datasheet - Page 6

• Manufacturer Part Number: m470t5663eh3
• Description: Ddr2 Unbuffered Sodimm
• Manufacturer: Samsung Semiconductor, Inc.

6.0 Input/Output Function Description
SODIMM
V
RAS, CAS, WE
DD
DQS0~DQS7
DQS0~DQS7
ODT0~ODT1
CKE0-CKE1
DQ0~DQ63
DM0~DM7
BA0~BA2
SA0~SA1
CK0-CK1
CK0-CK1
A11~A13
,V
Symbol
A10/AP,
A0~A9,
S0-S1
TEST
DDSPD
SDA
SCL
,V
SS
Supply
In/Out
In/Out
In/Out
In/Out
Type
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
The system clock inputs. All address and command lines are sampled on the cross point of the rising edge
of CK and falling edge of CK . A Delay Locked Loop (DLL) circuit is driven from the clock input and output
timing for read operations is synchronized to the input clock.
Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low, By deactivating
the clocks, CKE low initiates the Power Down mode or the Self Refesh mode.
Enables the associated DDR2 SDRAM command decoder when low and disables the command decoder
when high. When the command decoder is disabled, new commands are ignored but previous operations
continue. Rank 0 is selected by S0, Rank 1 is selected by S1. Ranks are also called “Physical banks”.
When sampled at the cross point of the rising edge of CK and falling edge of CK, CAS, RAS, and WE define
the operation to be executed by the SDRAM.
Selects which DDR2 SDRAM internal bank is activated.
Asserts on-die termination for DQ, DM, DQS, and DQS signals if enabled via the DDR2 SDRAM Extended
Mode Register Set (EMRS).
During a Bank Activate command cycle, defines the row address when sampled at the cross point of the ris-
ing edge of CK and falling edge of CK. During a Read or Write command cycle, defines the column address
when sampled at the cross point of the rising edge of CK and falling edge of CK. In addition to the column
address, AP is used to invoke autoprecharge operation at the end of the burst read or write cycle. If AP is
high, autoprecharge is selected and BA0-BAn defines the bank to be precharged. If AP is low, autopre-
charge is disabled. During a Precharge command cycle, AP is used in conjunction with BA0-BAn to control
which bank(s) to precharge. If AP is high, all banks will be pecharged regardiess of the state of BA0-BAn
inputs. If AP is low, then BA0-BAn are used to define which bank to precharge.
Data Input/Output pins.
The data write masks, associated with one data byte. In Write mode, DM operates as a byte mask by allow-
ing input data to be written if it is low but blocks the write operation if it is high. In Read mode, DM lines have
no effect.
The data strobes, associated with one data byte, sourced with data transfers. In Write mode, the data strobe
is sourced by the controller and is centered in the data window. In Read mode, the data strobe is sourced by
the DDR2 SDRAMs and is sent at the leading edge of the data window. DQS signals are complements, and
timing is relative to the crosspoint of respective DQS and DQS If the module is to be operated in single
ended strobe mode, all DQS signals must be tied on the system board to V
registers programmed appropriately.
Power supplies for core, I/O, Serial Presence Detect, and ground for the module.
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resistor must be con-
nected to V
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from SCL
to V
Address pins used to select the Serial Presence Detect base address.
The TEST pin is reserved for bus analysis tools and is not connected on normal memory modules(SO-
DIMMs).
DD
to act as a pull up.
DD
to act as a pull up.
6 of 22
Description
Rev. 1.0 August 2008
SS
DDR2 SDRAM
and DDR2 SDRAM mode