m470t5663eh3 Samsung Semiconductor, Inc., m470t5663eh3 Datasheet - Page 16

• Manufacturer Part Number: m470t5663eh3
• Description: Ddr2 Unbuffered Sodimm
• Manufacturer: Samsung Semiconductor, Inc.

12.0 Input/Output Capacitance
* DM is internally loaded to match DQ and DQS identically.
13.0 Electrical Characteristics & AC Timing for DDR2-800/667
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
SODIMM
Input capacitance, CK and CK
Input capacitance, CKE , CS, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
Input capacitance, CK and CK
Input capacitance, CKE , CS, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
Refresh to active/Refresh command time
Average periodic refresh interval
Bin
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
tRCD
tRP
tRC
tRAS
(CL - tRCD - tRP)
(0 °C < T
Speed
OPER
Parameter
< 95 °C; V
Parameter
Non-ECC
Non-ECC
DDQ
3.75
12.5
12.5
57.5
min
2.5
45
= 1.8V + 0.1V; V
5
-
DDR2-800(E7)
5 - 5 - 5
tRFC
tREFI
70000
max
8
8
8
-
-
-
-
DD
85 °C < T
0 °C ≤ T
= 1.8V + 0.1V)
Symbol
Symbol
Symbol
CCK
CCK
CIO
CIO
CASE
CI
CI
CASE
16 of 22
3.75
min
2.5
15
15
60
45
3
-
≤ 85°C
DDR2-800(F7)
≤ 95°C
6 - 6- 6
Min
M470T5663EH3
M470T2863EH3
70000
-
-
-
-
-
-
max
256Mb
8
8
8
-
-
-
-
7.8
3.9
75
512Mb
Max
5.5
48
42
32
42
105
9
7.8
3.9
3.75
min
15
15
60
45
5
3
-
DDR2-667(E6)
5 - 5 - 5
(V
127.5
1Gb
7.8
3.9
DD
Min
M470T6464EHS
M470T2864EH3
Rev. 1.0 August 2008
-
-
-
-
-
-
=1.8V, V
DDR2 SDRAM
70000
max
8
8
8
-
-
-
-
2Gb
195
7.8
3.9
DDQ
Max
5.5
32
34
24
34
9
=1.8V, TA=25
327.5
4Gb
7.8
3.9
Units
ns
ns
ns
ns
ns
ns
ns
ns
Units
Units
Units
pF
pF
ns
µs
µs
o
C)