buk9215 NXP Semiconductors, buk9215 Datasheet - Page 6

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buk9215

Manufacturer Part Number
buk9215
Description
Buk9215-55a Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
Table 5:
T
9397 750 08633
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
R DSon
= 25 C.
= 25 C.
I D
(A)
(m )
300
250
200
150
100
function of drain-source voltage; typical values.
of drain current; typical values.
50
22
20
18
16
14
12
10
0
Characteristics
20
0
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
6
7
2
40
8
9
V GS (V) = 3.4
4
…continued
V GS (V) = 10
60
6
80
3.6
8
I D (A)
V DS (V)
4.6
5.0
5
03nb62
2.2
03nb61
Conditions
I
Figure 15
I
V
S
S
4
3
GS
4.0
4.2
= 20 A; V
= 20 A; dI
100
10
= 10 V; V
Rev. 01 — 16 August 2001
GS
S
/dt = 100 A/ s;
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
a
(m )
R DSon
j
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
a
1.5
0.5
19
18
17
16
15
14
13
12
11
10
2
1
0
---------------------------- -
R
-60
DSon 25 C
3
R
DSon
D
= 25 A.
Min
-
-
-
0
6
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
BUK9215-55A
60
9
Typ
0.85
51
102
120
12
V GS (V)
T j (ºC)
Max
1.2
-
-
03ne89
180
15
Unit
V
ns
nC
6 of 12

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