buk7219 NXP Semiconductors, buk7219 Datasheet - Page 6

• Manufacturer Part Number: buk7219
• Description: Buk7219-55a Trenchmos Tm Standard Level Fet
• Manufacturer: NXP Semiconductors

Table 5:
T
Philips Semiconductors
9397 750 07575
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C
= 25 C
(mOhms)
function of drain-source voltage; typical values.
of drain current; typical values.
R DSon
Characteristics
250
200
150
100
I D
(A)
50
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
0
50
45
40
35
30
25
20
15
10
0
V GS (V)= 6
20
2
40
60
…continued
4
6.5
80 100 120 140 160 180 200
7
6
8
8
V GS = 20
9
V DS (V)
Conditions
I
Figure 15
I
V
S
S
03na36
GS
10
= 25 A; V
= 25 A; dI
03na37
10
I D (A)
= 10 V; V
12
16
10
4.5
9
6
8
7
Rev. 01 — 02 October 2000
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. On-state resistance: typical values.
Fig 8. Normalized drain source on-state resistance
(mOhms)
T
R DSon
j
a
= 25 C; I
=
factor as a function of junction temperature.
a
--------------------------- -
R
40
35
30
25
20
15
10
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
5
0
DSon 25 C
2
1
0
R
4
-60
DSon
D
Min
= 25 A
6
-20
TrenchMOS™ standard level FET
8
20
10
BUK7219-55A
Typ
0.85
48
106
12
60
© Philips Electronics N.V. 2000. All rights reserved.
14
100
16
140
Max
1.2
T j (
V GS (V)
18
03na34
03aa28
o
C)
180
20
Unit
V
ns
nC
6 of 13