bso080p03ns3eg Infineon Technologies Corporation, bso080p03ns3eg Datasheet
bso080p03ns3eg
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bso080p03ns3eg Summary of contents
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OptiMOS ® 3 P3-Power-Transistor Features • single P-Channel in SO8 • Qualified according JEDEC • 150°C operating temperature • V =25 V, specially suited for notebook applications GS • ESD protected • Pb-free plating; RoHS compliant • applications: battery management, ...
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Parameter Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f ≤10 s tot 2.5 2 1 Safe operating area =25 ° parameter: ...
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Typ. output characteristics I =f =25 ° parameter 4 Typ. transfer characteristics I =f |>2 ...
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Drain-source on-state resistance R =f =14 DS(on -60 - Typ. capacitances C =f ...
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Avalanche characteristics parameter: T j(start) 100 10 125 ° Drain-source breakdown voltage V =f BR(DSS ...
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Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev. 2.0 BSO080P03NS3E G page 8 2009-05-26 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...