bso080p03ns3 Infineon Technologies Corporation, bso080p03ns3 Datasheet
bso080p03ns3
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bso080p03ns3 Summary of contents
Page 1
... =25 °C D,pulse =-14 =25 °C tot stg JESD22-A114 HBM page 1 page 1 BSO080P03NS3 G Product Summary =-10 V DS(on),max PG-DSO-8 Lead free Halogen free Yes Yes Value 10 secs steady state -14.8 -12 -11.8 -9.4 -12 ...
Page 2
... V =- =125 ° =- GSS =- =-12.4 A DS(on =- =-14 |>2 DS(on)max =-14 page 2 page 2 BSO080P03NS3 G Values min. typ. max 110 - - 150 - -3.1 -2.5 -1 -100 - - -100 - 8.1 11 ...
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... =25 ° S,pulse =-14 =25 ° =- /dt =400 A/µ page 3 page 3 BSO080P03NS3 G Values Unit min. typ. max. - 4500 6750 pF - 2100 3150 - 150 225 - 28 ...
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... Max. transient thermal impedance Z =f(t thJA parameter µs 100 µ 100 [V] page 4 page 4 BSO080P03NS3 G ≤ 6 120 120 T T [°C] [° 0.5 0.2 0.1 0.05 0.02 0.01 ...
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... V 4.2 V 4.0 V 4.0 V 3 [V] [V] 8 Typ. forward transconductance g =f 150 ° ° [V] page 5 page 5 BSO080P03NS3 =25 ° 4 ...
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... Forward characteristics of reverse diode I =f parameter Ciss Coss Crss [V] page 6 page 6 BSO080P03NS3 =-150µ -60 -60 -20 - 100 100 T T [°C] [° 150 °C 25 °C 25 ° ...
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... Gate charge waveforms s(th (th) 100 140 180 page 7 page 7 BSO080P03NS3 G =-14.8 A pulsed D DD - - [nC] [nC] gate gate ...
Page 8
... Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev. 2.21 Rev. 2.21 page 8 page 8 BSO080P03NS3 G 2011-11-02 2011-11-02 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.21 Rev. 2.21 page 9 page 9 BSO080P03NS3 G 2011-11-02 2011-11-02 ...