k6f2016v4e Samsung Semiconductor, Inc., k6f2016v4e Datasheet - Page 3

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k6f2016v4e

Manufacturer Part Number
k6f2016v4e
Description
128k X16 Bit Super Low Power And Low Voltage Full Cmos Static Ram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
K6F2016V4E Family
PRODUCT LIST
FUNCTIONAL DESCRIPTION
1. X means don t care.(Must be low or high state.)
ABSOLUTE MAXIMUM RATINGS
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
restricted to recommended operating condition. Exposure to absolute maximum rating conditions longer than 1seconds may affect reliability.
CS
X
H
L
L
L
L
L
L
L
L
1)
OE
X
X
X
X
X
H
H
L
L
L
1)
1)
1)
1)
1)
K6F2016V4E-EF55
K6F2016V4E-EF70
Part Name
WE
X
X
Item
H
H
H
H
H
L
L
L
1)
1)
LB
X
X
H
H
H
L
L
L
L
L
1)
1)
Industrial Temperature Products(-40~85 C)
1)
UB
X
X
H
H
H
L
L
L
L
L
1)
1)
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
I/O
Dout
Dout
Din
Din
1~8
V
Symbol
IN
T
V
- 3 -
, V
P
T
STG
CC
D
A
OUT
I/O
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
Din
Din
9~16
48-TBGA, 55ns, 3.3V
48-TBGA, 70ns, 3.3V
Lower Byte Read
Upper Byte Read
Lower Byte Write
Upper Byte Write
-0.2 to V
Output Disabled
Output Disabled
Function
-0.2 to 4.0V
Word Read
Deselected
Deselected
Word Write
-65 to 150
-40 to 85
Ratings
Mode
1.0
CC
+0.3V
CMOS SRAM
Revision 1.0
March 2002
Standby
Standby
Power
Active
Active
Active
Active
Active
Active
Active
Active
Unit
W
V
V
C
C

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