k6f2016v4e Samsung Semiconductor, Inc., k6f2016v4e Datasheet - Page 5

• Manufacturer Part Number: k6f2016v4e
• Description: 128k X16 Bit Super Low Power And Low Voltage Full Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

K6F2016V4E Family
AC OPERATING CONDITIONS
DATA RETENTION CHARACTERISTICS
1. 1) CS Vcc-0.2V(CS controlled) or
2. Typical values are measured at T
AC CHARACTERISTICS
1. The parameter is measured with 30pF test load.
TEST CONDITIONS
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load (See right): C
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
2) LB=UB Vcc-0.2V, CS 0.2V(LB/UB controlled)
Read
Write
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
UB, LB Access Time
Chip Select to Low-Z Output
UB, LB Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
UB, LB Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
UB, LB Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Item
Parameter List
C
(Test Load and Test Input/Output Reference)
L
L
=30pF+1TTL
=100pF+1TTL
A
=25 C and not 100% tested.
(Vcc=3.0~3.6V, Industrial product:T
Symbol
t
t
V
I
RDR
SDR
DR
DR
CS Vcc-0.2V
Vcc= 1.5V, CS Vcc-0.2V
See data retention waveform
Symbol
Test Condition
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
t
t
BHZ
OHZ
t
t
BLZ
OLZ
WC
CW
AW
BW
WP
WR
DW
OW
RC
AA
CO
OE
BA
HZ
OH
AS
DH
LZ
1)
- 5 -
A
=-40 to 85 C)
Min
1)
55
10
10
10
55
45
45
45
40
25
5
0
0
0
0
0
0
0
5
-
-
-
-
55ns
1. Including scope and jig capacitance
2. R
3. V
TM
1
=3070
1)
C
=2.8V
Max
L
55
55
25
55
20
20
20
20
Min
tRC
1)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
Speed Bins
0
-
,
R
2
=3150
Min
Typ
V
70
10
10
10
70
60
60
60
50
30
5
0
0
0
0
0
0
0
5
0.5
-
-
-
-
TM
-
-
-
R
R
2)
3)
70ns
1
2
CMOS SRAM
2)
2)
Max
Max
70
70
35
70
25
25
25
20
3.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
-
-
Revision 1.0
March 2002
Units
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
A