k6f2016v4e Samsung Semiconductor, Inc., k6f2016v4e Datasheet - Page 4

• Manufacturer Part Number: k6f2016v4e
• Description: 128k X16 Bit Super Low Power And Low Voltage Full Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

K6F2016V4E Family
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. T
2. Overshoot: Vcc+2.0V in case of pulse width 20ns.
3. Undershoot: -2.0V in case of pulse width 20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1. Capacitance is sampled, not 100% tested.
DC AND OPERATING CHARACTERISTICS
1. Typical values are measured at V
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current (CMOS)
Supply voltage
Ground
Input high voltage
Input low voltage
Input capacitance
Input/Output capacitance
A
=-40 to 85 C, otherwise specified.
Item
Item
1)
Item
(f=1MHz, T
CC
=3.3V, T
Symbol
A
I
I
V
V
I
I
=25 C)
CC1
CC2
SB1
I
LO
LI
OH
OL
A
=25 C and not 100% tested.
Symbol
V
CS=V
Cycle time=1 s, 100%duty, I
LB 0.2V or/and UB 0.2V, V
Cycle time=Min, I
LB=V
I
I
Other input =0~Vcc
C
C
OL
OH
1) CS Vcc-0.2V(CS controlled) or
2) LB=UB Vcc-0.2V, CS 0.2V(LB/UB controlled)
IN
IN
IO
=Vss to Vcc
= 2.1mA
= -1.0mA
IL
IH
or/and UB=V
or OE=V
Symbol
Vcc
Vss
V
V
IH
IO
Test Condition
IH
IL
=0mA, 100% duty, CS=V
or WE=V
Test Conditions
IL
V
V
, V
- 4 -
IN
IO
IN
=0V
=0V
1)
=V
IN
IL
IO
IL
, V
=0mA, CS 0.2V,
0.2V or V
or V
IO
=Vss to Vcc
-0.2
IH
Min
3.0
2.2
0
3)
IN
V
IL
CC
,
Min
-0.2V
-
-
Typ
3.3
0
-
-
Min
2.4
-1
-1
Vcc+0.2
CMOS SRAM
-
-
-
-
Max
10
8
Max
3.6
0.6
0
Typ
0.5
-
-
-
-
-
-
2)
1)
Revision 1.0
Max
0.4
March 2002
40
10
1
1
4
-
Unit
Unit
pF
pF
V
V
V
V
Unit
mA
mA
V
V
A
A
A