STTH1210-Y STMICROELECTRONICS [STMicroelectronics], STTH1210-Y Datasheet - Page 3

• Manufacturer Part Number: STTH1210-Y
• Description: Automotive ultrafast recovery - high voltage diode
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STTH1210-Y
Table 5.
Figure 1.
Figure 3.
Symbol
V
I
30
25
20
15
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
RM
t
t
S
5
0
FP
rr
fr
1.E-03
0
P(W)
Z
th(j-c)
Single pulse
1
Reverse recovery time
Reverse recovery current
Softness factor
Forward recovery time
Forward recovery voltage
/R
2
th(j-c)
Dynamic characteristics
Conduction losses versus
average current
Relative variation of thermal
impedance junction to case
versus pulse duration
3
4
=0.05
1.E-02
5
Parameter
6
=0.1
I
F(AV)
7
(A)
8
t (s)
=0.2
p
9
1.E-01
10 11 12 13 14 15
T
=0.5
I
V
I
V
I
V
I
V
I
V
I
T
Doc ID 018921 Rev 1
F
F
F
F
F
F
j
R
R
R
R
FR
1.E+00
= 1 A, dI
= 1 A, dI
= 12 A, dI
= 12 A, dI
= 12 A
= 12 A, dI
= 25 °C
= 30 V, T
= 30 V, T
= 600 V, T
= 600 V, T
=1
= 1.5 x V
Test conditions
F
F
Figure 2.
Figure 4.
/dt = -50 A/µs,
/dt = -100 A/µs,
F
F
F
j
j
dI
/dt = -200 A/µs,
/dt = -200 A/µs,
/dt = 50 A/µs,
= 25 °C
= 25 °C
Fmax
j
j
= 125 °C
= 125 °C
F
35
30
25
20
15
10
120
110
100
/dt = 50 A/µs
5
0
90
80
70
60
50
40
30
20
10
0
I
0
0.0
RM
, T
I
FM
V
T
(A)
j
R
=125°C
j
(A)
=600V
50
= 25 °C
I
0.5
F
=0.5 x I
100
Forward voltage drop versus
forward current
Peak reverse recovery current
versus dI
F(AV)
1.0
(Maximum values)
T
150
(Typical values)
j
=150°C
1.5
T
j
=150°C
200
2.0
F
/dt (typical values)
I
F
= I
250
Min.
2.5
F(AV)
dI /dt(A/µs)
300
3.0
F
Typ
67
48
15
350
(Maximum values)
V
2
5
3.5
FM
Characteristics
T
I
F
j
= 2 x I
=25°C
(V)
400
4.0
Max.
F(AV)
400
90
65
20
450
4.5
500
Unit
5.0
ns
ns
A
V
3/8