CM1400DUC-24S MITSUBISHI [Mitsubishi Electric Semiconductor], CM1400DUC-24S Datasheet - Page 6

• Manufacturer Part Number: CM1400DUC-24S
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM1400DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
July-2012
PERFORMANCE CURVES
2800
2400
2000
1600
1200
10
800
400
8
6
4
2
0
6
0
V
GE
0
15 V
=20 V
COLLECTOR-EMITTER VOLTAGE V
T
T
j
COLLECTOR-EMITTER SATURATION
j
=25 °C
=25 °C
8
GATE-EMITTER VOLTAGE V
VOLTAGE CHARACTERISTICS
OUTPUT CHARACTERISTICS
2
10
13.5 V
(TYPICAL)
(TYPICAL)
4
12
I
I
I
C
C
C
14
=1400 A
=2800 A
=560 A
6
12 V
10 V
11 V
9 V
16
GE
(V)
CE
8
(V)
18
10
20
6
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2800
2400
2000
1600
1200
800
400
0
0
0.0
EMITTER-COLLECTOR VOLTAGE V
V
G-E short-circuited
GE
COLLECTOR-EMITTER SATURATION
400
=15 V
FORWARD CHARACTERISTICS
0.5
COLLECTOR CURRENT I
T
VOLTAGE CHARACTERISTICS
j
=125 °C
T
FREE WHEELING DIODE
j
800
=150 °C
T
j
=150 °C
1.0
(TYPICAL)
(TYPICAL)
1200
1.5
T
1600
j
T
=25 °C
T
j
=125 °C
j
=25 °C
2.0
TENTATIVE
2000
C
(A)
EC
2400
2.5
(V)
2800
3.0