CM900DUC-24S MITSUBISHI [Mitsubishi Electric Semiconductor], CM900DUC-24S Datasheet - Page 2

• Manufacturer Part Number: CM900DUC-24S
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM900DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
July-2012
ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
V
V
I
I
P
I
I
V
T
T
T
T
I
I
V
V
C
C
C
Q
t
t
t
t
V
t
Q
E
E
E
R
r
C
CRM
E
ERM
C E S
G E S
r r
d ( o n )
r
d ( o f f )
f
g
CES
GES
EC
j m a x
C m a x
j o p
s t g
G E ( t h )
C E s a t
o n
o f f
r r
t o t
i s o l
CC'+EE'
i e s
o e s
r e s
G
r r
Symbol
Symbol
(Note1)
(Note1)
(Note1)
(Note1)
(Note1)
(Note1)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
Isolation voltage
Maximum junction temperature
Maximum case temperature
Operating junction temperature
Storage temperature
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
Item
Item
j
=25 °C, unless otherwise specified)
j
=25 °C, unless otherwise specified)
-
-
I
V
Per switch
G-E short-circuited
C-E short-circuited
DC, T
Pulse, Repetitive
T
(Note2)
Pulse, Repetitive
Terminals to base plate, RMS, f=60 Hz, AC 1 min
(Note4)
-
V
V
I
V
(Terminal)
I
V
V
V
R
I
G-E short-circuited,
(Terminal)
I
V
R
V
Inductive load
Main terminals-chip, per switch,
T
C
C
C
E
E
C
C
CE
GE
=90 mA, V
=900 A
GE
=900 A, V
CE
CC
CC
G
=900 A
=900 A, G-E short-circuited, (Chip)
CC
G
CC
GE
=25 °C
=25 °C
=0 Ω, Inductive load
=0 Ω, Inductive load
=V
=10 V, G-E short-circuited
=V
=15 V,
=600 V, I
=600 V, I
=600 V, I
=600 V, I
=±15 V, R
C
CES
GES
=125 °C
, G-E short-circuited
, C-E short-circuited
(Note6)
(Note6)
(Note2, 4)
(Note4)
GE
CE
C
C
E
C
=900 A, V
=900 A, V
=900 A, V
=I
G
=15 V, (Chip)
=10 V
=0 Ω, T
2
E
,
,
=900 A,
(Note2, 4)
Conditions
(Note3)
(Note3)
j
=150 °C,
GE
GE
GE
Conditions
=15 V
=±15 V,
=±15 V,
T
T
T
T
T
T
j
j
j
j
=125 °C
=150 °C
=125 °C
=150 °C
j
j
=25 °C
=25 °C
Min.
5.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
0.286
2300
Typ.
1.55
1.75
1.80
1.55
1.65
1.65
1.65
1.65
65.3
73.3
183
6.0
2.2
50
-
-
-
-
-
-
-
-
-
-
-40 ~ +150
-40 ~ +125
TENTATIVE
Rating
1200
1800
6520
1800
4000
± 20
900
900
175
125
Max.
1.90
2.10
900
250
950
350
450
1.0
3.0
6.6
1.5
90
18
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Unit
mΩ
mA
nC
μC
mJ
mJ
°C
°C
°C
μA
nF
ns
ns
W
V
V
V
V
Ω
V
V
A
A
V
V