CM900DUC-24S MITSUBISHI [Mitsubishi Electric Semiconductor], CM900DUC-24S Datasheet - Page 8

• Manufacturer Part Number: CM900DUC-24S
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM900DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
July-2012
PERFORMANCE CURVES
1000
20
15
10
100
5
0
0.1
10
1
0
0.1
COLLECTOR-EMITTER VOLTAGE V
GATE CHARGE CHARACTERISTICS
CAPACITANCE CHARACTERISTICS
500
V
C C
G-E short-circuited, T
GATE CHARGE Q
= 600 V, I
1000
1
(TYPICAL)
(TYPICAL)
C
= 900 A, T
1500
j
G
=25 °C
2000
(nC)
j
=25 °C
10
2500
CE
(V)
C
C
C
i e s
o e s
r e s
3000
100
8
1000
100
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
0.001
V
10
0.01
0.1
CC
0.00001
1
REVERSE RECOVERY CHARACTERISTICS
=600 V, V
---------------: T
R
0.0001
EMITTER CURRENT I
FREE WHEELING DIODE
t h ( j - c ) Q
GE
=±15 V, R
j
=150 °C, - - - - -: T
Single pulse, T
=23 K/kW, R
I
t
r r
0.001
r r
(TYPICAL)
(MAXIMUM)
TIME (S)
G
100
=0 Ω, INDUCTIVE LOAD
0.01
t h ( j - c ) D
C
=25°C
E
j
=125 °C
(A)
=39 K/kW
0.1
TENTATIVE
1
1000
10