CM900DUC-24S MITSUBISHI [Mitsubishi Electric Semiconductor], CM900DUC-24S Datasheet - Page 6

• Manufacturer Part Number: CM900DUC-24S
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM900DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
July-2012
PERFORMANCE CURVES
1800
1600
1400
1200
1000
10
800
600
400
200
8
6
4
2
0
0
6
V
0
GE
15 V
=20 V
COLLECTOR-EMITTER VOLTAGE V
T
T
j
COLLECTOR-EMITTER SATURATION
j
=25 °C
=25 °C
8
GATE-EMITTER VOLTAGE V
VOLTAGE CHARACTERISTICS
OUTPUT CHARACTERISTICS
2
10
13.5 V
(TYPICAL)
(TYPICAL)
4
12
14
I
I
I
C
C
C
=900 A
6
=1800 A
=360 A
12 V
10 V
11 V
9 V
16
GE
(V)
CE
8
(V)
18
10
20
6
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1800
1600
1400
1200
1000
800
600
400
200
0
0
0.0
EMITTER-COLLECTOR VOLTAGE V
V
G-E short-circuited
200
GE
COLLECTOR-EMITTER SATURATION
T
=15 V
FORWARD CHARACTERISTICS
j
0.5
COLLECTOR CURRENT I
VOLTAGE CHARACTERISTICS
=150 °C
400
T
FREE WHEELING DIODE
j
=125 °C
T
600
j
1.0
=150 °C
(TYPICAL)
(TYPICAL)
800
1.5
1000
T
j
T
=25 °C
j
=125 °C
1200
T
2.0
TENTATIVE
j
=25 °C
C
(A)
1400
EC
2.5
1600
(V)
1800
3.0