MMBD7000LT1_05 ONSEMI [ON Semiconductor], MMBD7000LT1_05 Datasheet
MMBD7000LT1_05
Manufacturer Part Number
MMBD7000LT1_05
Description
Dual Switching Diode
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.MMBD7000LT1_05.pdf
(4 pages)
MMBD7000LT1
Dual Switching Diode
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
April, 2005 − Rev. 3
MAXIMUM RATINGS (EACH DIODE)
THERMAL CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction to
Total Device Dissipation
Thermal Resistance,
Junction and Storage Temperature
Pb−Free Packages are Available
Semiconductor Components Industries, LLC, 2005
(Note 1)T
Derate above 25 C
Ambient
Alumina Substrate, (Note 2)
T
Derate above 25 C
Junction−to−Ambient
A
= 25 C
Characteristic
A
= 25 C
Rating
Preferred Device
I
Symbol
Symbol
FM(surge)
T
R
R
J
V
P
P
, T
I
qJA
qJA
F
R
D
D
stg
−55 to +150
Value
Max
100
200
500
225
556
300
417
1.8
2.4
1
mW/ C
mW/ C
mAdc
mAdc
Unit
Unit
Vdc
mW
mW
C/W
C/W
C
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MMBD7000LT1
MMBD7000LT1G
MMBD7000LT3
MMBD7000LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
1
M5C
M
G
ORDERING INFORMATION
2
ANODE
1
MARKING DIAGRAM
http://onsemi.com
3
CATHODE/ANODE
1
= Specific Device Code
= Date Code
= Pb−Free Package
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SOT−23
SOT−23
M5C M
3
SOT−23 (TO−236AB)
Publication Order Number:
CASE 318−08
STYLE 8
10,000 Tape & Reel
10,000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
CATHODE
MMBD7000LT1/D
2
Shipping
†
Related parts for MMBD7000LT1_05
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
SWITCHMODE Power Rectifier
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Trench Power MOSFET -20 V, Single P-Channel, SOT-23
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET 12 A, 60 V
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET 3.0 Amps 60 Volts N−Channel
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET 2.0 A, 60 V, Logic Level
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET -60 V, -27.5 A, P-Channel D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
N-Channel Enhancement−Mode D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
60 V, 60 A, N-Channel TO-220 and D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
MMBD7000LT1_05 Summary of contents
Page 1
MMBD7000LT1 Preferred Device Dual Switching Diode Features Pb−Free Packages are Available MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage = 100 mAdc) (I (BR) Reverse Voltage Leakage Current ( Vdc 100 Vdc Vdc, 125 C) R Forward Voltage (I = 1.0 mAdc) ...
Page 3
MMBD7000LT1 CURVES APPLICABLE TO EACH DIODE 100 1.0 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage 150 125 ...
Page 4
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks ...