buk482-100a NXP Semiconductors, buk482-100a Datasheet
buk482-100a
Manufacturer Part Number
buk482-100a
Description
Powermos Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BUK482-100A.pdf
(8 pages)
Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope suitable for surface
mount applications.
The device is intended for use in
automotive and general purpose
switching applications.
PINNING - SOT223
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
1 Temperature measured 1-3 mm from tab.
January 1998
PowerMOS transistor
SYMBOL
V
V
I
I
I
P
T
T
SYMBOL PARAMETER
R
R
D
D
DM
PIN
V
stg
j
DS
DGR
tot
th j-b
th j-amb
1
2
3
4
GS
gate
drain
source
drain (tab)
From junction to board
From junction to ambient
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
1
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.17
CONDITIONS
R
T
T
-
-
T
T
-
-
amb
amb
amb
amb
1
GS
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
= 20 k
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
1
2
4
3
V
GS
= 10 V
MIN.
SYMBOL
- 55
-
-
-
-
-
-
-
-
MIN.
-
-
g
Product Specification
MAX.
TYP.
0.28
MAX.
100
150
40
1.8
1.8
BUK482-100A
100
100
150
150
1.8
1.1
7.2
1.8
-
30
d
s
MAX.
70
-
Rev 1.100
UNIT
UNIT
˚C
˚C
W
V
V
V
A
A
A
UNIT
K/W
K/W
W
˚C
V
A
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