NSR0320MW2T1_10 ONSEMI [ON Semiconductor], NSR0320MW2T1_10 Datasheet
NSR0320MW2T1_10
Manufacturer Part Number
NSR0320MW2T1_10
Description
Schottky Barrier Diodes
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.NSR0320MW2T1_10.pdf
(3 pages)
NSR0320MW2T1
Schottky Barrier Diodes
handling capability, and low forward voltage performance.
Features
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 3
MAXIMUM RATINGS
Reverse Voltage
Peak Revese Voltage
Forward Power Dissipation
Forward Current (DC)
Forward Current
Junction Temperature Range
Storage Temperature Range
These Schottky barrier diodes are designed for high current,
Compliant
Low Forward Voltage − 0.24 Volts (Typ) @ I
High Current Capability
ESD Rating − Human Body Model: CLASS 3B
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
@ T
Derate above 25°C
Continuous
t = 8.3 ms Half Sinewave
A
= 25°C
Rating
− Machine Model: C
(T
J
= 125°C unless otherwise noted)
Symbol
V
T
V
P
T
I
I
RM
stg
F
F
R
F
J
−55 to +125
−55 to +150
F
= 10 mAdc
Value
200
2.0
20
23
1
5
mW/°C
Unit
mW
Vdc
°C
°C
V
A
A
†For information on tape and reel specifications,
NSR0320MW2T1G SOD−323
NSR0320MW2T3G SOD−323
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SCHOTTKY BARRIER DIODE
1
CASE 477
SOD−323
STYLE 1
Device
CATHODE
RD = Specific Device Code
M
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
HIGH CURRENT
1
= Date Code
= Pb−Free Package
http://onsemi.com
2
(Pb−Free)
(Pb−Free)
Package
Publication Order Number:
MARKING
DIAGRAM
NSR0320MW2T1/D
10,000/Tape & Reel
ANODE
3000/Tape & Reel
2
RD MG
Shipping†
G
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NSR0320MW2T1_10 Summary of contents
Page 1
NSR0320MW2T1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.24 Volts (Typ • High Current Capability • ESD Rating − Human ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic Total Capacitance ( 1.0 MHz) R Reverse Leakage ( Reverse Leakage ( 85°C) R Reverse Leakage ( 85°C) R Forward ...
Page 3
NOTE 5 NOTE 3 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks ...