PMEG4010ETR NXP [NXP Semiconductors], PMEG4010ETR Datasheet

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PMEG4010ETR

Manufacturer Part Number
PMEG4010ETR
Description
High-temperature 40 V, 1 A Schottky barrier rectifier
Manufacturer
NXP [NXP Semiconductors]
Datasheet
1.PMEG4010ETR.pdf (13 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
PMEG4010ETR
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Scan or click this QR code to view the latest information for this product
1. Product profile
Table 1.
Symbol
I
I
V
V
I
F
F(AV)
R
R
F
Quick reference data
Parameter
forward current
average forward
current
reverse voltage
forward voltage
reverse current
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
•
•
•
•
•
•
•
•
•
•
•
PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
26 September 2012
Average forward current: I
Reverse voltage: V
Low forward voltage
High power capability due to clip-bonding technology
Small and flat lead SMD plastic package
AEC-Q101 qualified
High temperature T
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Conditions
T
δ = 0.5 ; f = 20 kHz; T
square wave
δ = 0.5 ; f = 20 kHz; T
square wave
T
I
T
δ ≤ 0.02 ; pulsed
F
sp
j
j
= 1 A; T
= 25 °C
= 25 °C; V
= 165 °C
R
j
≤ 175 °C
j
≤ 40 V
= 25 °C
R
= 40 V; t
F(AV)
≤ 1 A
amb
sp
p
≤ 170 °C;
≤ 300 µs;
≤ 140 °C;
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
430
10
Max
1.4
1
1
40
490
50
Unit
A
A
A
V
mV
µA

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PMEG4010ETR Summary of contents

Page 1

... PMEG4010ETR High-temperature Schottky barrier rectifier 26 September 2012 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. ...

Page 2

... T amb square wave δ kHz; T ≤ 170 °C; sp square wave ms °C; square wave p j(init) All information provided in this document is subject to legal disclaimers. 26 September 2012 PMEG4010ETR Min Typ Max - 4 standard footprint Graphic symbol 1 2 sym001 ...

Page 3

... High-temperature Schottky barrier rectifier Conditions T ≤ 25 °C amb Conditions in free air are a significant part of the total power losses standard footprint All information provided in this document is subject to legal disclaimers. 26 September 2012 PMEG4010ETR Min Max - 680 [2] - 1150 [3] - 2140 [1] - 175 -55 175 -65 175 O , standard footprint ...

Page 4

... 125 ° 150 ° 175 ° All information provided in this document is subject to legal disclaimers. 26 September 2012 PMEG4010ETR 006aab363 (s) p 006aab364 (s) p Min Typ Max - 310 ...

Page 5

... ° / A/µ 006aad108 I (A) 0.6 0.8 1.0 V (V) F Fig. 5. All information provided in this document is subject to legal disclaimers. 26 September 2012 PMEG4010ETR Min Typ ≤ 300 µs; - ≤ 300 µs; - ≤ 300 µs; - ≤ 300 µ ° 0 ° ...

Page 6

... V ( (1) δ (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 9. Average reverse power dissipation as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 26 September 2012 PMEG4010ETR 006aad111 (3) (2) (1) 0.5 1.0 I F(AV) = 175 °C j 006aad149 ( 125 °C j © ...

Page 7

... Ceramic PCB (1) δ (DC) (2) δ kHz (3) δ kHz (4) δ kHz Fig. 13. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 26 September 2012 PMEG4010ETR (1) (2) (3) ( 100 150 T amb = 175 ° ...

Page 8

... Product data sheet High-temperature Schottky barrier rectifier 1.5 (1) I F(AV) (A) 1.0 (2) (3) 0.5 ( 100 t rr All information provided in this document is subject to legal disclaimers. 26 September 2012 PMEG4010ETR 006aad116 150 200 T (° R(meas) time 006aad022 © NXP B.V. 2012. All rights reserved ...

Page 9

... High-temperature Schottky barrier rectifier duty cycle δ × δ with I defined as peak current All information provided in this document is subject to legal disclaimers. 26 September 2012 PMEG4010ETR time V FRM V F time 001aab912 006aac658 = I at DC, and I RMS ...

Page 10

... NXP Semiconductors 9. Package outline Fig. 18. Package outline SOD123W 10. Soldering 2.1 1.6 Fig. 19. Reflow soldering footprint for SOD123W 11. Revision history Table 8. Revision history Data sheet ID Release date PMEG4010ETR v.1 20120926 PMEG4010ETR Product data sheet High-temperature Schottky barrier rectifier 1.9 1.5 1 3.7 2.8 3.3 2.4 2 1.05 0.75 Dimensions in mm 4.4 2.9 2.8 (2×) 1.1 (2×) 1.2 (2× ...

Page 11

... NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 26 September 2012 PMEG4010ETR © NXP B.V. 2012. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMEG4010ETR Product data sheet High-temperature Schottky barrier rectifier All information provided in this document is subject to legal disclaimers. 26 September 2012 PMEG4010ETR © NXP B.V. 2012. All rights reserved ...

Page 13

... For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 September 2012 PMEG4010ETR Product data sheet High-temperature Schottky barrier rectifier All information provided in this document is subject to legal disclaimers. 26 September 2012 PMEG4010ETR © NXP B.V. 2012. All rights reserved ...

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