SI4963BDY-T1 VISHAY [Vishay Siliconix], SI4963BDY-T1 Datasheet - Page 2

• Manufacturer Part Number: SI4963BDY-T1
• Description: Dual P-Channel 2.5-V (G-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4963BDY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
40
32
24
16
8
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
− Drain-to-Source Voltage (V)
a
V
2
GS
a
a
J
= 5 thru 3.5 V
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
I
DS(
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
SD
t
t
4
rr
fs
gs
gd
r
f
g
g
2.5 V
1.5 V
)
3 V
2 V
5
New Product
V
DS
I
V
D
DS
^ −1 A, V
= −10 V, V
I
V
F
V
= −20 V, V
V
V
V
V
V
DS
V
GS
= −1.7 A, di/dt = 100 A/ms
V
I
DS
DS
S
DS
DD
DD
Test Condition
GS
DS
v −5 V, V
= −1.7 A, V
= −4.5 V, I
= V
= −10 V, I
f = 1 MHz
= −20 V, V
= −10 V, R
= −10 V, R
= −2.5 V, I
= 0 V, V
GEN
GS
GS
GS
, I
= −4.5 V, I
= −4.5 V, R
D
= 0 V, T
GS
GS
D
= −250 mA
D
GS
GS
D
L
L
= −6.5 A
= −6.5 A
= "12 V
= −4.5 V
= 10 W
= 10 W
= −2 A
= 0 V
= 0 V
J
40
32
24
16
D
= 55_C
8
0
g
= −6.5 A
0.0
= 6 W
0.5
V
GS
1.0
Transfer Characteristics
Min
−0.6
−20
− Gate-to-Source Voltage (V)
1.5
T
C
= −55_C
2.0
0.025
0.040
−0.75
Typ
2.6
4.6
8.3
18
14
30
40
80
55
40
25_C
S-40235—Rev. A, 16-Feb-04
Document Number: 72753
2.5
"100
Max
0.032
0.050
−1.4
−1.2
120
3.0
−1
−5
21
45
60
85
80
125_C
3.5
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
W
4.0