SI4963BDY-T1 VISHAY [Vishay Siliconix], SI4963BDY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4963BDY-T1
• Description: Dual P-Channel 2.5-V (G-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72753
S-40235—Rev. A, 16-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
40
10
5
4
3
2
1
0
1
0.0
0
0
V
V
I
GS
D
DS
Source-Drain Diode Forward Voltage
2
= 6.5 A
= 2.5 V
On-Resistance vs. Drain Current
= 10 V
0.3
8
V
SD
4
Q
T
J
g
= 150_C
− Source-to-Drain Voltage (V)
I
− Total Gate Charge (nC)
D
− Drain Current (A)
6
Gate Charge
0.6
16
V
GS
8
= 4.5 V
0.9
24
10
T
J
= 25_C
12
1.2
32
14
1.5
40
16
New Product
2000
1600
1200
0.10
0.08
0.06
0.04
0.02
0.00
800
400
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
−25
D
rss
GS
= 6.5 A
I
= 4.5 V
D
1
4
= 2 A
T
V
V
0
C
J
GS
DS
− Junction Temperature (_C)
oss
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
2
8
Vishay Siliconix
50
I
12
3
D
Si4963BDY
75
= 6.5 A
C
iss
100
16
www.vishay.com
4
125
150
20
5
3