hy5ps1g831alfp Hynix Semiconductor, hy5ps1g831alfp Datasheet - Page 20

• Manufacturer Part Number: hy5ps1g831alfp
• Description: 1gb Ddr2 Sdram
• Manufacturer: Hynix Semiconductor

Rev. 0.7 / Oct. 2007
3.5. Input/Output Capacitance
4. Electrical Characteristics & AC Timing Specification
( 0 ℃ ≤ T
Refresh Parameters by Device Density
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Note 1: 8 bank device Precharge All Allowance : tRP for a Precharge All command for and 8 Bank device will equal to
tRP+1*tCK, where tRP are the values for a single bank Precharge, which are shown in the above table.
Refresh command time
Input/output capacitance delta, DQ, DM, DQS, DQS
Input capacitance delta, all other input-only pins
Refresh to Active/
Input/output capacitance, DQ, DM, DQS, DQS
Bin(CL-tRCD-tRP)
Average periodic
refresh interval
Input capacitance, all other input-only pins
Parameter
CAS Latency
Parameter
tRPNote1
CASE
Input capacitance delta, CK and CK
Speed
tRCD
tRAS
tRC
Input capacitance, CK and CK
≤ 95℃; V
Parameter
DDQ
tREFI
= 1.8 +/- 0.1V; V
DDR2-667
4-4-4
min
12
12
45
57
4
0 ℃≤ T
85℃＜ T
Symbol
tRFC
DDR2-533
CASE
CASE
DD
11.25
11.25
56.25
3-3-3
min
45
3
= 1.8 +/- 0.1V)
≤ 85℃
≤ 95℃
DDR2-533
Symbol
CDCK
CDIO
4-4-4
CCK
CDI
CIO
min
CI
15
15
45
60
4
256Mb
7.8
3.9
75
DDR2-533
Min
1.0
1.0
2.5
DDR2 400
DDR2 533
18.75
18.75
63.75
x
x
x
5-5-5
min
512Mb
45
5
105
7.8
3.9
Max
0.25
0.25
2.0
2.0
4.0
0.5
HY5PS1G1631A(L)FP
DDR2-400
127.5
HY5PS1G431A(L)FP
HY5PS1G831A(L)FP
1Gb
7.8
3.9
3-3-3
min
15
15
40
55
3
Min
1.0
1.0
2.5
DDR2 667
DDR2 800
x
x
x
2Gb
195
7.8
3.9
DDR2-400
4-4-4
Max
min
0.25
0.25
20
20
40
65
2.0
2.0
3.5
0.5
4
327.5
4Gb
7.8
3.9
Units
Units
Units
tCK
pF
pF
pF
pF
pF
pF
ns
ns
ns
ns
20
ns
us
us