hy5ps1g831l-y6 Hynix Semiconductor, hy5ps1g831l-y6 Datasheet - Page 46

• Manufacturer Part Number: hy5ps1g831l-y6
• Description: Ddr2 Sdram - 1gb
• Manufacturer: Hynix Semiconductor

Rev 0.2 / Apr. 2004
Example 3: Burst Read with Auto Precharge Followed by an activation to the Same
Bank(tRC Limit):
RL = 5 (AL = 2, CL = 3, internal tRCD = 3, BL = 4, t
Example 4: Burst Read with Auto Precharge Followed by an Activation to the Same
Bank(tRP Limit):
RL = 5 (AL = 2, CL = 3, internal tRCD = 3, BL = 4, t
CK/CK
CMD
DQS/DQS
DQ’s
CK/CK
CMD
DQS/DQS
DQ’s
A10 = 1
A10 = 1
Post CAS
Post CAS
T0
READ A
T0
READ A
T1
T1
AL = 2
AL = 2
NOP
NOP
> = tRAS(min)
> = tRAS(min)
T2
T2
NOP
NOP
> = t
> = t
RL = 5
RL = 5
RC
RC
T3
T3
NOP
NOP
CL =3
CL =3
Auto Precharge Begins
Auto Precharge Begins
T4
T4
NOP
NOP
T5
T5
RTP
RTP
NOP
NOP
DOUT A
DOUT A
CL =3
CL =3
<= 2 clocks)
<= 2 clocks)
0
0
> = t
> = t
DOUT A
DOUT A
RP
RP
T6
T6
1
1
NOP
NOP
DOUT A
DOUT A
2
2
HY5PS1G431(L)F
HY5PS1G831(L)F
DOUT A
DOUT A
T7
T7
3
3
Bank A
Activate
NOP
Activate
T8
T8
Bank A
NOP
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