hy5ps1g831l-y6 Hynix Semiconductor, hy5ps1g831l-y6 Datasheet - Page 74

• Manufacturer Part Number: hy5ps1g831l-y6
• Description: Ddr2 Sdram - 1gb
• Manufacturer: Hynix Semiconductor

Rev 0.2 / Apr. 2004
Write postamble
Write preamble
Address and control input
hold time
Address and control input
setup time
Read preamble
Read postamble
Active to precharge
command
Active to Read or Write
(with and without Auto-
Precharge) delay
Auto-Refresh to
Active/Auto-Refresh
command period
Precharge Command
Period
Active to Active/Auto-
Refresh command period
Active to active command
period for 1KB page
size(x4,x8)
CAS to CAS command
delay
Write recovery time
Auto precharge write
recovery + precharge time
Internal write to read
command delay
Internal read to precharge
command delay
Exit self refresh to a non-
read command
Exit self refresh to a read
command
Exit precharge power down
to any non-read command
Parameter
Symbol
tWPST
tWPRE
tIH
tIS
tRPRE
tRPST
tRAS
tRCD
tRFC
tRP
tRC
tRRD
tCCD
tWR
tDAL
tWTR
tRTP
tXSNR
tXSRD
tXP
WR+tRP
tRFC +
127.5
DDR2-400 3-3-3
min
0.25
600
600
200
40*
55*
0.4
0.9
0.4
7.5
7.5
15
15
15
10
2
2
2
70000
max
0.6
1.1
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
WR+tRP
tRFC +
127.5
DDR2-533 4-4-4
min
500
500
200
0.4
0.25
0.9
0.4
7.5
7.5
45
15
15
60
10
15
2
2
2
70000
max
0.6
1.1
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
WR+tRP
tRFC +
127.5
DDR2-667 5-5-5
TBD
TBD
min
200
0.4
tbd
0.9
0.4
7.5
7.5
45
15
15
60
10
15
2
2
2
HY5PS1G431(L)F
HY5PS1G831(L)F
70000
max
0.6
1.1
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ps
ps
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
5,7,9
5,7,9
10
14
3
4
3
76