MRF18030BLR3 FREESCALE [Freescale Semiconductor, Inc], MRF18030BLR3 Datasheet - Page 2

• Manufacturer Part Number: MRF18030BLR3
• Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

2
MRF18030BLR3 MRF18030BLSR3
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture)
Drain- Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Reverse Transfer Capacitance
Output Power, 1 dB Compression Point
Common- Source Amplifier Power Gain @ 30 W
Drain Efficiency @ 30 W
Input Return Loss @ 30 W
1. Part internally matched both on input and output.
2. Device specifications obtained on a Production Test Fixture.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
GS
DS
DS
GS
DS
DS
DD
DD
DD
DD
= 0 Vdc, I
= 26 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc, I
= 26 Vdc, I
= 26 Vdc, I
= 26 Vdc, I
D
DS
D
D
D
D
DQ
DQ
DQ
DQ
= 20 μAdc)
GS
= 100 μAdc)
= 250 mAdc)
= 1 Adc)
= 1 Adc)
= 0 Vdc)
= 250 mA, f = 1930 - 1990 MHz)
= 250 mA, f = 1930 - 1990 MHz)
= 250 mA, f = 1930 - 1990 MHz)
= 250 mA, f = 1930 - 1990 MHz)
= 0 Vdc)
Characteristic
(1)
(T
C
(2)
= 25°C, 50 ohm system unless otherwise noted)
GS
= 0 Vdc)
V
Symbol
V
V
V
(BR)DSS
P1dB
I
I
DS(on)
C
GS(th)
GS(Q)
G
GSS
IRL
DSS
g
η
rss
fs
ps
46.5
Min
65
—
—
—
—
—
27
13
—
2
2
0.29
Typ
- 12
3.9
1.3
30
14
50
—
—
—
3
2
Freescale Semiconductor
Max
4.5
0.4
—
—
—
—
—
—
- 9
1
1
4
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dB
dB
pF
W
%
S