MRF18030BLR3 FREESCALE [Freescale Semiconductor, Inc], MRF18030BLR3 Datasheet - Page 4

• Manufacturer Part Number: MRF18030BLR3
• Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

4
MRF18030BLR3 MRF18030BLSR3
15
14
13
12
10
11
16
15
14
13
12
10
11
16
15
14
13
12
10
11
1850
0.1
1
Figure 3. Wideband Gain and IRL at 30 W and
I
f = 1960 MHz
T = 25_C
Figure 5. Power Gain versus Output Power
Figure 7. Power Gain versus Output Power
DQ
I
300 mA
200 mA
100 mA
V
I
T = 25_C
DQ
DQ
DD
= 250 mA
= 400 mA
= 250 mA
= 26 Vdc
1900
P
P
out
out
15 W Output Power
, OUTPUT POWER (WATTS)
, OUTPUT POWER (WATTS)
1
f, FREQUENCY (MHz)
IRL @ 15 W
IRL @ 30 W
G
G
1950
ps
ps
10
@ 15 W
@ 30 W
V
DD
V
f = 1960 MHz
T = 25_C
DD
= 22 V
= 26 Vdc
10
2000
TYPICAL CHARACTERISTICS
24 V
26 V
28 V
30 V
30 V
2050
100
100
0
−5
−10
−15
−20
−25
−30
16
15
14
13
12
11
10
0.1
15
14
13
12
11
10
Figure 8. Power Gain and Efficiency versus
40
35
30
25
20
15
10
9
5
0
1880
0.1
85_C
55_C
V
I
f = 1960 MHz
T = 25_C
Figure 4. Output Power versus Frequency
DQ
Figure 6. Power Gain versus Output Power
DD
= 250 mA
= 26 Vdc
1900
P
1 W
0.5 W
0.25 W
in
P
out
= 2 W
, OUTPUT POWER (WATTS)
P
Output Power
1920
1
out
G
, OUTPUT POWER (WATTS)
h
ps
1
f, FREQUENCY (MHz)
1940
V
I
f = 1960 MHz
T = 25_C
DQ
1960
DD
Freescale Semiconductor
= 250 mA
10
= 26 Vdc
10
1980
RF Device Data
V
I
T = 25_C
DQ
DD
= 250 mA
2000
= 26 Vdc
100
60
50
40
30
20
10
0
2020
100