MRF5S9150HR3_09 FREESCALE [Freescale Semiconductor, Inc], MRF5S9150HR3_09 Datasheet - Page 6

• Manufacturer Part Number: MRF5S9150HR3_09
• Description: RF Power Field Effect Transistor
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

MRF5S9150HR3
6
-1 0
-2 0
-3 0
-4 0
-5 0
-6 0
-7 0
-8 0
-90
1
Figure 7. Intermodulation Distortion Products
V
f1 = 880 MHz, f2 = 880.1 MHz
Two-Tone Measurements
DD
3rd Order
= 28 Vdc, I
5th Order
P
out
DQ
7th Order
versus Output Power
, OUTPUT POWER (WATTS) PEP
= 1500 mA
10
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gain
61
59
57
55
53
51
49
47
45
60
50
40
30
20
10
0
25
1
ALT1
P1dB = 52.87 dBm (193.64 W)
V
f = 880 MHz, N-CDMA IS-95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
and Drain Efficiency versus Output Power
Figure 9. Pulse CW Output Power versus
DD
P3dB = 53.84 dBm (242.1 W)
27
TYPICAL CHARACTERISTICS
= 28 Vdc, I
100
ACPR
P
29
out
P6dB = 54.52 dBm (283.14 W)
, OUTPUT POWER (WATTS) AVG.
DQ
G
P
ps
in
= 1500 mA
31
, INPUT POWER (dBm)
400
Input Power
10
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
33
DD
= 28 Vdc, I
35
-1 0
-2 0
-3 0
-4 0
-5 0
-60
η
0
D
0.1
Figure 8. Intermodulation Distortion Products
85_C
DQ
V
I
(f1 + f2)/2 = Center Frequency of 880 MHz
37
DQ
3rd Order
7th Order
-30 _C
5th Order
DD
= 1500 mA
= 1500 mA, Two-Tone Measurements
85_C
= 28 Vdc, P
85_C
100
Ideal
39
T
C
25_C
= -30 _C
25_C
Actual
-30 _C
25_C
out
versus Tone Spacing
TWO-T ONE SPACING (MHz)
41
= 150 W (PEP)
300
1
-20
-30
-40
-50
-60
-70
-80
Freescale Semiconductor
10
RF Device Data
100