MRF5S9150HR3_09 FREESCALE [Freescale Semiconductor, Inc], MRF5S9150HR3_09 Datasheet - Page 7

• Manufacturer Part Number: MRF5S9150HR3_09
• Description: RF Power Field Effect Transistor
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
10
10
10
10
21
20
19
18
17
16
23
22
21
20
19
18
17
16
Figure 13. MTTF Factor versus Junction Temperature
10
9
8
7
90
0
0.1
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
V
I
f = 880 MHz
DQ
T
Figure 12. Power Gain versus Output Power
DD
100
C
Figure 11. Power Gain and Drain Efficiency
= 1500 mA
= -30 _C
= 28 Vdc
V
50
110
25_C
85_C
DD
TYPICAL CHARACTERISTICS
= 12 V
T
120
P
16 V
J
out
P
, JUNCTION TEMPERATURE (°C)
D
versus CW Output Power
out
2
1
, OUTPUT POWER (WATTS) CW
for MTTF in a particular application.
100
, OUTPUT POWER (WATTS) CW
130
20 V
140
150
150
G
η
24 V
ps
D
10
160
200
170
28 V
180
I
f = 880 MHz
DQ
= 1500 mA
250
190
32 V
100
-30 _C
200
2
85_C
210
300
70
60
50
40
30
20
10
0
MRF5S9150HR3
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