MRF6S19140HR3_07 FREESCALE [Freescale Semiconductor, Inc], MRF6S19140HR3_07 Datasheet

MRF6S19140HR3_07

Manufacturer Part Number

MRF6S19140HR3_07

Description

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF6S19140HR3_07.pdf (11 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Typical 2 - Carrier N - CDMA Performance: V

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• Optimized for Doherty Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain - Source Voltage

Gate - Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for PCN and PCS base station applications with frequencies from

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz,

PAR = 9.8 dB @ 0.01% Probability on CCDF.

Output Power

Case Temperature 80°C, 140 W CW

Case Temperature 77°C, 29 W CW

out

Power Gain — 16 dB

Drain Efficiency — 27.5%

IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth

ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth

the MTTF calculators by product.

Select Documentation/Application Notes - AN1955.

= 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync,

(1,2)

Characteristic

Rating

Operation

= 28 Volts, I

= 1150 mA,

Symbol

DSS

θJC

stg

Document Number: MRF6S19140H

CASE 465B - 03, STYLE 1

CASE 465C - 02, STYLE 1

MRF6S19140HR3 MRF6S19140HSR3

1930 - 1990 MHz, 29 W AVG., 28 V

MRF6S19140HSR3

MRF6S19140HR3

LATERAL N - CHANNEL

RF POWER MOSFETs

NI - 880S

NI - 880

- 65 to +150

Value

2 x N - CDMA

- 0.5, +68

- 0.5, +12

Value

0.33

0.38

150

225

(2,3)

Rev. 5, 5/2007

°C/W

Unit

Vdc

°C

Related parts for MRF6S19140HR3_07

MRF6S19140HR3_07 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications used in Class AB for PCN - PCS/cellular radio and WLL applications. • ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage ...

Page 3

V BIAS C13 INPUT C1 V BIAS C14 0.864″ x 0.082″ Microstrip Z2 1.373″ x 0.082″ Microstrip Z3 0.282″ x 0.900″ Microstrip Z4 0.103″ x 0.900″ ...

Page 4

C13 C14 © Motorola, Inc. 2002 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition ...

Page 5

IM3 6 4 ACPR 2 0 1910 1920 Figure Carrier N - CDMA Broadband Performance @ P 18 η ...

Page 6

Vdc 160 W (PEP 1150 mA DD out DQ Two −Tone Measurements −10 (f1 + f2)/2 = Center Frequency of 1960 MHz −20 3rd Order −30 5th Order −40 7th Order −50 ...

Page 7

IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth 0.01 Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured ...

Page 8

MHz Z Z Figure 15. Series Equivalent Source and Load Impedance MRF6S19140HR3 MRF6S19140HSR3 8 Z load = 5 Ω 1900 MHz Z source f = 1900 MHz f = 2020 MHz V = ...

Page 9

(FLANGE bbb bbb ccc (FLANGE (FLANGE bbb ...

Page 10

Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this ...

Page 11

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 480 ...

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