MRF6S19140HR3_07 FREESCALE [Freescale Semiconductor, Inc], MRF6S19140HR3_07 Datasheet - Page 2

• Manufacturer Part Number: MRF6S19140HR3_07
• Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

MRF6S19140HR3 MRF6S19140HSR3
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
DS
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 28 Vdc, I
= 10 Vdc, I
DS
D
D
D
GS
GS
= 300 μAdc)
= 1150 mAdc, Measured in Functional Test)
= 3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
IRL
DSS
DSS
GSS
η
= 1150 mA, P
rss
ps
D
Min
0.1
—
—
—
—
15
26
—
—
—
1
2
out
= 29 W Avg., f1 = 1930 MHz,
0.21
27.5
Typ
IV (Minimum)
- 37
- 51
- 15
2.8
A (Minimum)
16
2 (Minimum)
—
—
—
2
2
Class
Freescale Semiconductor
Max
- 35
- 48
0.3
10
18
—
—
- 9
1
1
3
4
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
pF
%