MRF6S23100HR3_06 FREESCALE [Freescale Semiconductor, Inc], MRF6S23100HR3_06 Datasheet - Page 6

• Manufacturer Part Number: MRF6S23100HR3_06
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

MRF6S23100HR3 MRF6S23100HSR3
6
18
17
16
15
14
13
12
−55
11
−15
−20
−25
−30
−35
−40
−45
−50
0.1
0.1
Figure 7. Intermodulation Distortion Products
V
I
f = 2350 MHz
DQ
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
DD
Figure 10. Power Gain and Drain Efficiency
7th Order
DD
5th Order
3rd Order
= 1000 mA
85_C
= 28 Vdc
25_C
= 28 Vdc, P
T
C
= −30_C
P
out
versus CW Output Power
, OUTPUT POWER (WATTS) CW
out
1
versus Tone Spacing
TWO−TONE SPACING (MHz)
= 100 W (PEP), I
1
η
D
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
10
DQ
35
30
25
20
15
10
G
5
0
= 1000 mA
ps
1
and Drain Efficiency versus Output Power
10
V
f1 = 2345 MHz, f2 = 2355 MHz
2−Carrier W−CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
DD
G
ps
= 28 Vdc, I
TYPICAL CHARACTERISTICS
−30_C
100
P
out
DQ
, OUTPUT POWER (WATTS) AVG.
25_C
25_C
85_C
= 1000 mA
100
70
60
50
40
30
20
10
0
10
ACPR
T
C
16
15
14
13
12
10
57
55
53
51
49
47
= 25_C
11
32
0
P1dB = 51.18 dBm (131.19 W)
V
Figure 11. Power Gain versus Output Power
η
DD
Figure 8. Pulse CW Output Power versus
D
25_C
20
33
= 12 V
IM3
85_C
−30_C
25_C
−30_C
P
40
34
85_C
out
P3dB = 51.88 dBm (154.14 W)
, OUTPUT POWER (WATTS) CW
P
100
in
16 V
, INPUT POWER (dBm)
60
35
−20
−25
−30
−35
−40
−45
−50
−55
Input Power
20 V
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2350 MHz
DD
80
36
= 28 Vdc, I
Freescale Semiconductor
24 V
100
37
DQ
= 1000 mA
RF Device Data
120
I
f = 2350 MHz
38
DQ
28 V
= 1000 mA
Ideal
140
39
Actual
32 V
160
40