MRF8S8260H FREESCALE [Freescale Semiconductor, Inc], MRF8S8260H Datasheet - Page 8

• Manufacturer Part Number: MRF8S8260H
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

8
MRF8S8260HR3 MRF8S8260HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
63.5
60.5
57.5
54.5
51.5
48.5
62
59
56
53
50
47
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
V
28
DD
= 28 Vdc, I
29.5
(MHz)
(MHz)
Figure 10. Pulsed CW Output Power
851
865
880
895
851
865
880
895
f
f
31
versus Input Power @ 28 V
851 MHz
Test Impedances per Compression Level
DQ
32.5 34
= 1500 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
P
P1dB
P1dB
P1dB
P1dB
in
Watts
, INPUT POWER (dBm)
359
366
362
365
865 MHz
P1dB
35.5 37
880 MHz
1.46 -- j2.70
1.85 -- j3.04
2.20 -- j3.31
2.53 -- j3.58
Z
dBm
55.5
55.6
55.6
55.6
source
895 MHz

38.5
Watts
482
485
477
478
40 41.5
851 MHz
3.02 + j0.04
2.92 + j0.03
2.85 + j0.70
2.50 + j0.76
865 MHz
P3dB
Ideal
880 MHz
Z
load

895 MHz
Actual
dBm
56.8
56.9
56.8
56.8
43 44.5
Freescale Semiconductor, Inc.
RF Device Data