MRF9030NR1_06 FREESCALE [Freescale Semiconductor, Inc], MRF9030NR1_06 Datasheet

MRF9030NR1_06

Manufacturer Part Number

MRF9030NR1_06

Description

RF Power Field Effect Transistors

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF9030NR1_06.pdf (16 pages)

Current page: 1 of 16
Download datasheet (537Kb)

RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

cies up to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large-signal, common-source amplifier applications

in 26 volt base station equipment.

• Typical Performance at 945 MHz, 26 Volts

• Integrated ESD Protection

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface

• 200_C Capable Plastic Package

• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.

• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Table 3. ESD Protection Characteristics

Table 4. Moisture Sensitivity Level

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Thermal Resistance, Junction to Case

Human Body Model

Machine Model

Charge Device Model

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

Designed for broadband commercial and industrial applications with frequen-

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

Output Power

Mount.

13 inch Reel.

Derate above 25°C

the MTTF calculators by product.

Output Power — 30 Watts PEP

Power Gain — 20 dB

Efficiency — 41% (Two Tones)

IMD — - 31 dBc

Test Methodology

= 25°C

Test Conditions

Characteristic

Rating

MRF9030NR1

MRF9030NBR1

Rating

Symbol

DSS

θJC

stg

Package Peak Temperature

CASE 1337 - 03, STYLE 1

CASE 1265 - 08, STYLE 1

MRF9030NBR1

Document Number: MRF9030N

MRF9030NBR1

MRF9030NR1

TO - 272- 2

LATERAL N - CHANNEL

MRF9030NR1

PLASTIC

TO - 270- 2

RF POWER MOSFETs

PLASTIC

945 MHz, 30 W, 26 V

M2 (Minimum)

MRF9030NR1 MRF9030NBR1

C7 (Minimum)

C6 (Minimum)

260

1 (Minimum)

- 65 to +150

BROADBAND

- 0.5, +65

- 0.5, + 15

Value

Class

Value

0.93

1.08

139

200

(1)

Rev. 10, 5/2006

W/°C

°C/W

Unit

Vdc

Unit

°C

Related parts for MRF9030NR1_06

MRF9030NR1_06 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen- cies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. • ...

Page 2

Table 5. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current ( Vdc Vdc Zero Gate Voltage Drain Leakage Current ( Vdc Vdc ...

Page 3

INPUT 0.260″ x 0.060″ Microstrip Z2 0.240″ x 0.060″ Microstrip Z3 0.500″ x 0.100″ Microstrip Z4 0.200″ x 0.270″ Microstrip Z5 0.330″ x 0.270″ ...

Page 4

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on ...

Page 5

Figure 4. Class AB Broadband Circuit Performance 21 375 mA DQ 20.5 300 mA 20 250 mA 19.5 V 200 945 MHz f2 ...

Page 6

Figure 9. Power Gain, Efficiency and IMD 100 This above graph displays calculated MTTF in hours x ampere drain current. Life tests at ...

Page 7

MHz Figure 11. Series Equivalent Source and Load Impedance (MRF9030NR1) RF Device Data Freescale Semiconductor = 5 Ω source Z load f = 960 MHz f = 960 MHz f = 930 MHz V ...

Page 8

Figure 12. Series Equivalent Source and Load Impedance (MRF9030NBR1) MRF9030NR1 MRF9030NBR1 Ω load source f = 960 MHz f = 960 MHz f = 930 MHz f = 930 MHz ...

Page 9

RF Device Data Freescale Semiconductor NOTES MRF9030NR1 MRF9030NBR1 9 ...

Page 10

MRF9030NR1 MRF9030NBR1 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

RF Device Data Freescale Semiconductor NOTES MRF9030NR1 MRF9030NBR1 11 ...

Page 12

MRF9030NR1 MRF9030NBR1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 13

RF Device Data Freescale Semiconductor MRF9030NR1 MRF9030NBR1 13 ...

Page 14

MRF9030NR1 MRF9030NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

aaa GATE LEAD aaa ZONE "J" c1 DATUM H PLANE Device Data Freescale Semiconductor A E1 DRAIN LEAD ...

Page 16

How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 480- 768- ...

Related keywords

MRF9030NR1_06 datasheet
MRF9030NR1_06 data sheet
MRF9030NR1_06 pdf datasheet
MRF9030NR1_06 component
MRF9030NR1_06 part
MRF9030NR1_06 distributor
MRF9030NR1_06 RoHS
MRF9030NR1_06 datasheet download