MRF9060NR1_09 FREESCALE [Freescale Semiconductor, Inc], MRF9060NR1_09 Datasheet

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MRF9060NR1_09

Manufacturer Part Number
MRF9060NR1_09
Description
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
cies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common-source amplifier applications in 26 volt
base station equipment.
• Typical Performance at 945 MHz, 26 Volts
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Charge Device Model
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Designed for broadband commercial and industrial applications with frequen-
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
Output Power
13 inch Reel.
Derate above 25°C
calculators by product.
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
Efficiency — 40% (Two Tones)
IMD — - 31.5 dBc
Test Methodology
C
= 25°C
Test Conditions
Characteristic
Rating
Rating
3
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
Package Peak Temperature
Document Number: MRF9060N
LATERAL N - CHANNEL
MRF9060NR1
CASE 1265 - 09, STYLE 1
945 MHz, 60 W, 26 V
RF POWER MOSFET
M2 (Minimum)
C6 (Minimum)
260
1 (Minimum)
- 65 to +150
BROADBAND
- 0.5, +65
- 0.5, + 15
Value
Value
Class
1.79
0.56
223
200
TO - 270 - 2
PLASTIC
(1)
Rev. 13, 6/2009
MRF9060NR1
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Unit
°C
°C
W
°C
1

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MRF9060NR1_09 Summary of contents

Page 1

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- cies up to 1000 MHz. The high gain and broadband performance of this device ...

Page 2

Table 5. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current ( Vdc Vdc Zero Gate Voltage Drain Leakage Current ( Vdc Vdc ...

Page 3

INPUT 0.240″ x 0.060″ Microstrip Z2 0.240″ x 0.060″ Microstrip Z3 0.500″ x 0.100″ Microstrip Z4 0.100″ x 0.270″ x 0.080″, Taper Z5 0.330″ x ...

Page 4

INPUT C1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact ...

Page 5

Figure 3. Class AB Broadband Circuit Performance 625 mA DQ 18.5 500 mA 18 450 mA 17.5 275 OUTPUT POWER ...

Page 6

945 MHz f2 = 945.1 MHz Figure 8. Power Gain, Efficiency, and IMD versus Output Power Figure ...

Page 7

Figure 10. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor f = 930 MHz = 2 Ω 960 MHz Z source Z load 450 mA ...

Page 8

MRF9060NR1 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 9

RF Device Data Freescale Semiconductor MRF9060NR1 9 ...

Page 10

MRF9060NR1 10 RF Device Data Freescale Semiconductor ...

Page 11

PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers ...

Page 12

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 480 ...

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