MRF9060NR1_09 FREESCALE [Freescale Semiconductor, Inc], MRF9060NR1_09 Datasheet - Page 5

• Manufacturer Part Number: MRF9060NR1_09
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
−80
16.5
18.5
17.5
19
18
17
1
1
Figure 6. Intermodulation Distortion Products
Figure 4. Power Gain versus Output Power
V
I
f1 = 945 MHz
f2 = 945.1 MHz
DQ
DD
= 450 mA
= 26 Vdc
P
P
out
I
DQ
out
versus Output Power
, OUTPUT POWER (WATTS) PEP
500 mA
450 mA
275 mA
, OUTPUT POWER (WATTS) PEP
= 625 mA
3rd Order
5th Order
7th Order
10
19
18
17
16
15
14
13
12
10
11
Figure 3. Class AB Broadband Circuit Performance
930
935
V
f1 = 945 MHz
f2 = 945.1 MHz
DD
= 26 Vdc
TYPICAL CHARACTERISTICS
V
P
I
Two−Tone, 100 kHz Tone Spacing
DQ
DD
out
940
f, FREQUENCY (MHz)
= 450 mA
= 26 Vdc
= 60 W (PEP)
100
100
G
IMD
η
IRL
ps
945
20
18
16
14
12
10
8
950
0.1
−25
−35
−45
−55
−15
−20
−30
−40
−50
Figure 7. Power Gain and Efficiency versus
1
Figure 5. Intermodulation Distortion versus
955
P
out
I
DQ
, OUTPUT POWER (WATTS) AVG.
P
= 275 mA
450 mA
960
out
1
500 mA
Output Power
, OUTPUT POWER (WATTS) PEP
50
45
40
35
−28
−30
−32
−34
−36
G
η
ps
625 mA
Output Power
10
−10
−12
−14
−16
−18
10
V
I
f = 945 MHz
DQ
DD
= 450 mA
= 26 Vdc
V
f1 = 945 MHz
f2 = 945.1 MHz
DD
MRF9060NR1
= 26 Vdc
100
100
60
50
40
30
20
10
0
5