NRVBB1060T4G ONSEMI [ON Semiconductor], NRVBB1060T4G Datasheet - Page 2

• Manufacturer Part Number: NRVBB1060T4G
• Description: SWITCHMODE Power Rectifier
• Manufacturer: ONSEMI [ON Semiconductor]

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current (Rated V
Peak Repetitive Forward Current
Nonrepetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Working Peak Reverse Voltage
DC Blocking Voltage
(Rated V
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(i
(i
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
F
F
F
F
= 10 Amps, T
= 10 Amps, T
= 20 Amps, T
= 20 Amps, T
R
, Square Wave, 20 kHz) T
C
C
C
C
= 125°C)
= 25°C)
= 125°C)
= 25°C)
C
C
= 125°C)
= 25°C)
R
)
Rating
C
= 133°C
R
) T
C
= 133°C
http://onsemi.com
NRVBB1060
2
Symbol
V
V
I
I
dv/dt
R
R
I
I
F(AV)
RRM
T
FRM
FSM
RWM
V
RRM
T
v
i
qJC
qJA
stg
R
R
F
J
D
/dT
J
< 1/R
*65 to +175
*65 to +175
qJA
10,000
Value
0.85
0.95
0.10
150
.
0.5
2.0
0.7
0.8
60
10
20
60
25
°C/W
°C/W
V/ms
Unit
mA
°C
°C
V
A
A
A
A
V