bf512 NXP Semiconductors, bf512 Datasheet
bf512
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bf512 Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1997 ...
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... Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513). PINNING - SOT23 1 = gate 2 ...
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Philips Semiconductors N-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage (open source) Drain current (DC or average) Gate current Total power dissipation amb Storage temperature ...
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... 100 MHz 1.5 handbook, halfpage C rs (pF) 1 0.5 typ Fig for BF510 and BF511 for BF512 and BF513 MHz amb December 1997 amb mA BF510 typ ...
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Philips Semiconductors N-channel silicon field-effect transistors 300 handbook, halfpage P tot (mW) 200 100 Fig.4 Power derating curve. December 1997 MDA245 120 160 200 T amb ( C) 5 Product specification BF510 to 513 ...
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Philips Semiconductors N-channel silicon field-effect transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE ...
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Philips Semiconductors N-channel silicon field-effect transistors DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...